STF10NK50Z Allicdata Electronics
Allicdata Part #:

497-4654-5-ND

Manufacturer Part#:

STF10NK50Z

Price: $ 2.21
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 500V 9A TO220FP
More Detail: N-Channel 500V 9A (Tc) 30W (Tc) Through Hole TO-22...
DataSheet: STF10NK50Z datasheetSTF10NK50Z Datasheet/PDF
Quantity: 141
1 +: $ 2.21000
10 +: $ 2.14370
100 +: $ 2.09950
1000 +: $ 2.05530
10000 +: $ 1.98900
Stock 141Can Ship Immediately
$ 2.21
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1219pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 39.2nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 700 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STF10NK50Z is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) from the STF10NK series. It is a VDSS (Drain-Source Voltage, Steady State) rated single N channel MOSFET, manufactured by STMicroelectronics. The STF10NK50Z MOSFET is used for a range of different applications, including DC-DC conversion, load control, power management, and power switching.

Application Field:

The STF10NK50Z MOSFET has a wide range of applications. Its low gate charge and high Drain-Source Voltage make it ideal for DC-DC converters, as well as load control, power management and power switching. In addition, it is used in a variety of high frequency switching applications such as RF amplifiers, cameras and optical disks. The STF10NK50Z is also particularly suited to applications with space constraints, as its extremely small package size can facilitate high power density designs.

Working Principle:

The STF10NK50Z MOSFET is a low RDS (ON) MOSFET, which means that it has a low total resistance between its Source and Drain terminals. This low resistance allows for greater power dissipation in applications where a large voltage drop is required, such as DC-DC conversion. The STF10NK50Z MOSFET also has a low gate-source capacitance (QG), which allows for faster switching and less power dissipation than with a conventional MOSFET.

The STF10NK50Z MOSFETs are typically turned ON and OFF by applying a voltage to the Gate terminal. When the voltage is applied to the Gate, it creates an electric field in the channel between the Source and the Drain. This field creates an electrostatic force that is strong enough to move electrons into the channel and turn the transistor ON. When the voltage applied to the Gate is removed, the same process is reversed and the transistor turns OFF.

The STF10NK50Z MOSFETs are also able to dissipate large amounts of heat, which makes them suitable for use in high power applications. The high power dissipation rating enables the use of higher Drain-Source Voltage (VDSS), allowing for higher efficiency in applications such as DC-DC converters. In addition, the STF10NK50Z MOSFETs have low threshold voltage, which means that they can be easily switched on and off with a small gate voltage.

Conclusion:

The STF10NK50Z is a single N channel MOSFET from the STF10NK series. It has a wide range of applications, including DC-DC conversion, load control, power management, and power switching. The low gate charge and high Drain-Source Voltage make it ideal for these types of applications. The STF10NK50Z also has a low RDS (ON) resistance and low gate-source capacitance (QG), which make it well-suited for high frequency switching applications. In addition, its small package size makes it ideal for designs with space constraints.

The specific data is subject to PDF, and the above content is for reference

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