STF10N62K3

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Introduction.

STF10N62K3 is a single N-Channel insulated-gate field-effect transistor (FET) manufactured by STMicroelectronics. Featuring an advanced threshold voltage, this N-Channel FET provides superior low Ron performance over standard FETs in terms of linearity, output power, and efficiency. With a maximum on-state resistance (RDS(on)) of 0.8Ω and a maximum drain-to-source breakdown voltage of 10V, STF10N62K3 offers flexibility and reliability in a wide range of applications.

Application Field.

As an advanced N-Channel FET, STF10N62K3 performs well in the following applications:

• Battery protection: STF10N62K3 can be used in battery protection circuits to prevent reverse current due to its low RDS(on).
• DC/DC converters and switching power supplies: Designers are often challenged to deliver improved efficiency and output power with reduced power loss. The low RDS(on) of STF10N62K3 saves energy, increases efficiency, and improves the overall power density of power supply designs.
• Power management: STF10N62K3 can be used in power management circuits, such as those used in mobile devices, to control the power supply current and voltage.
• LED lighting and switching applications: STF10N62K3 can be used in buck/boost, dimmer, and non-isolated lighting applications to control the brightness and switching of LEDs.
• DC to AC inverters: STF10N62K3 can be used to drive inverter circuit transformers to convert DC to AC.
• Motor control: STF10N62K3 can be used to control the speed of DC motors.

Working Principle.

STF10N62K3 is a VoltFET, meaning that its RDS(on) is determined by the gate voltage. This is due to the insulation between the gate and the channel. The higher the gate voltage, the higher its RDS(on). The transistor can be switched on and off by controlling the applied voltage to its gate. In order for the transistor to be off, the gate voltage must be below the threshold voltage (VGS(th)), which is typically -3V. When the gate voltage rises above the threshold voltage, the drain-source voltage starts to build, and the current starts flowing through the transistor.

Under certain conditions, the STF10N62K3 can be saturated, meaning that the voltage across the drain-source is relatively small, and the transistor is operating in its linear region. This occurs when the gate voltage is greater than the threshold voltage (VGS(th)) and greater than the drain-source voltage (VGS-VDS). In this region, the device can deliver up to 3A of continuous current.

STF10N62K3 also has built in thermal protection, which turns off the device when its junction temperature reaches 150°C. This thermal protection prevents the device from overheating and failing.

Conclusion.

The STF10N62K3 N-Channel FET is a very versatile device. It can be used in a wide range of applications, including battery protection, DC/DC converters and switching power supplies, power management, LED lighting and switching applications, DC to AC inverters, and motor control. Its low RDS (on) and threshold voltage make it a power efficient and reliable device for any application.

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