STF11NM80

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STF11NM80 is a n-channel enhancement mode Field Effect Transistor (FET) with a thickness field oxide (Twin-tub) structure for low on-state resistance and fast switching speeds. It is designed for use in general-purpose, low voltage, switching and amplification applications and is available in a variety of package types and sizes. The STF11NM80 is lead (Pb) free and compliant with the RoHS directive. This makes it extremely attractive to industries where Pb-free and RoHS compliant devices are necessary, such as the automotive and medical industries.

The STF11NM80’s field effect principle is based on the quantum mechanical phenomenon that a negative charge density is induced in an active channel, or in other words a channel between the source and drain, when a positive voltage is applied to the gate of the FET. The greater the voltage applied to the gate, the larger the induced charge density and the higher the n-type FET’s drain current will be. The FET’s input capacitance, or junction capacitance, is a measure of the gate’s sensitivity to the change in drain current with gate voltage. A small junction capacitance is desirable for fast switching because of the smaller time constant that results from the small capacitance.

STF11NM80 has a low input capacitance drain circuit that minimizes switching times and does not require the user to factor in gate charge. The STF11NM80's low on-state resistance is especially important for power supplies and applications where power is at a premium and significant efficiency gains can be realized. The STF11NM80 also features a low threshold voltage which allows the gate to be driven effectively with low-level digital logic. This feature is also especially important in applications where power is in short supply as the gate can be drive with a 3.3V or even a 2.5V supply

The STF11NM80 is well suited for use in a variety of digital and analog switching applications. It is especially attractive for systems that require high-speed switching, energy efficiency or small size. Common applications for the STF11NM80 include power management in portable electronics, mobile phones, and automotive systems, as well as high-speed logic interfacing and analog signal switching. The STF11NM80 can also be used in efficient high-speed switching applications such as high-side and low-side switches, ORing, and motor drive circuits.

In summary, the STF11NM80 is an n-channel enhancement mode power MOSFET suitable for many general-purpose, low voltage switching and amplification applications. It offers a small input capacitance and low on-state resistance, making it an ideal choice for high-speed switching and energy efficient power management in portable electronics, mobile phones, and automotive systems. The low threshold voltage also makes this device ideal for systems that require low-level digital logic. The STF11NM80 is available in a variety of package types and sizes and is Pb-free and RoHS compliant.

The specific data is subject to PDF, and the above content is for reference