| Allicdata Part #: | 497-15531-5-ND |
| Manufacturer Part#: |
STF12N65M2 |
| Price: | $ 1.26 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 650V 8A TO220FP |
| More Detail: | N-Channel 650V 8A (Tc) 25W (Tc) Through Hole TO-22... |
| DataSheet: |  STF12N65M2 Datasheet/PDF |
| Quantity: | 49488 |
| 1 +: | $ 1.26000 |
| 10 +: | $ 1.22220 |
| 100 +: | $ 1.19700 |
| 1000 +: | $ 1.17180 |
| 10000 +: | $ 1.13400 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 25W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 535pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 16.5nC @ 10V |
| Series: | MDmesh™ M2 |
| Rds On (Max) @ Id, Vgs: | 500 mOhm @ 4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The STF12N65M2 is a N-channel power MOSFET developed by STMicroelectronics for use in a variety of applications. It is designed for high voltage applications and is rated for a voltage rating of 650V and a continuous current rating of 12A.
The STF12N65M2 is a Field Effect Transistor (FET) that uses Metal Oxide Semiconductor (MOS) technology. MOSFETs combine the advantages of both JFETs and Bipolar Junction Transistors (BJTs) to produce a device that is both efficient and cost-effective. Unlike BJTs, the STF12N65M2 is superior at switching and amplification. This is because of its effective semiconductor gate, which allows the transfer of charge carriers effectively and efficiently.
The STF12N65M2 is especially useful in applications that require high current/voltage switches and amplifiers. It is frequently used in radio frequency applications and power supplies. In radio frequency applications, the STF12N65M2 can provide improved switching performance, high efficiency and excellent signal-to-noise ratios. In power supplies, the efficiency of the power train is greatly improved. The device also exhibits low on-resistance and low gate charge, making it suitable for high-power applications.
The working principle of the STF12N65M2 is based on the MOSFET, which consists of two transistors: a gate and a source. When a voltage is applied to the gate of the device, the electric field produced causes a channel to be formed between the source and the drain. This channel acts as an amplifier and allows current to flow in proportion to the applied voltage. The MOSFET has the added advantage of being able to switch the flow of current quickly, thus providing superior performance in controlling, regulating and regulating power.
The STF12N65M2 is a powerful tool for designing high-performance, high-efficiency solutions. Its wide range of applications and superior performance make it an attractive choice for a variety of applications. Its low on-resistance and low gate charge give it excellent efficiency, allowing it to provide superior performance in radio frequency and power supply applications.
The specific data is subject to PDF, and the above content is for reference
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