STF12N65M5

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STF12N65M5 is an N-channel MOSFET developed and manufactured by STMicroelectronics. It is built using the company’s proprietary and cutting-edge FET technology called Super-junction. The device features excellent and robust switching performance, with the drain current rated at 6.5A. STF12N65M5 has a remarkable voltage withstand capability, with the drain-source voltage up to 650V. Moreover, the device offers low on-resistance RDS(on) and low gate charge, enabling superior electrical characteristics and making it ideal for a wide range of applications.

STF12N65M5 is mainly used for high voltage switching application such as motor control, synchronous rectification, switching mode power supplies and UPS systems. It is electrically suitable for high frequency applications and with both standard and fast switching time. The device is capable of switching up to 900V at high and reliable current levels, making it suitable for a variety of automotive and other applications that require high reliability and high efficiency.

The working principle of STF12N65M5 is based on the principle of thermal inertia and on the inherent capacitance between the gate, drain, and source. The device is connected to a power supply and when the switch is actuated by a positive voltage on the gate, a current flows between the source and drain, resulting in the device switching on. The magnitude of the current depends on the applied gate voltage. When the gate voltage is reduced, the current decreases and the device switches off.

The device is designed to give superior electrical characteristics at high temperatures. It has a low RDS(on) value, which means it uses less energy for the same amount of power, making it more efficient. Furthermore, it is designed to minimize capacitance effects which can limit switching speed and reduce reliability. The device also has a high gate drive capability, allowing it to handle large current spikes without any degradation.

In conclusion, STF12N65M5 is an excellent choice for high frequency and high voltage switching applications that require robust and reliable performance. Its ability to handle large current spikes with minimal degradation, combined with its lower RDS(on) and improved capacitance characteristics make it a reliable device for automotive applications. Furthermore, it has a tight dielectric spacing, making it well-suited to use in harsh environment.

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