STF130N10F3

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STF130N10F3 is a field-effect transistor (FET) produced by ST Microelectronics, a global semiconductor leader. It is a N-channel enhancement mode device with an exceptionally low gate charge, making it suitable for a wide range of applications from high performance to low power applications.

The STF130N10F3 is a single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It features an exceptionally low gate charge, which makes it suitable for high performance applications. It is rated at 30 volts and has a drain-source resistance of just 13 ohms. It is a perfect choice for efficient power amplifiers, switching regulators and motor controllers.

The principle of operation of a MOSFET is simple. It uses the applied voltage between the drain and source to turn the transistor on and off. When the voltage is applied to the gate of the MOSFET, a depletion layer is formed across the channel, allowing the current to flow between the drain and source. By adjusting the voltage on the gate, the flow of current can be controlled accordingly.

The STF130N10F3 features a low gate threshold voltage, allowing it to act as a digital switch where the applied voltage must be less than the threshold voltage to turn the MOSFET on. It also has a low drain-source on-resistance, meaning it can switch high currents with low voltage drop. This makes it an excellent choice for power amplifiers, switching regulators, and motor controllers.

The STF130N10F3 is an ideal choice for applications requiring high efficiency, low power consumption, and low voltage drop. It can be used in switching regulators, DC-DC converters, motor controllers, and power amplifiers, making it a versatile choice for many applications.

The STF130N10F3 is a single N-channel MOSFET with a low gate charge and high current carrying capacity, making it suitable for many applications. Its low gate threshold voltage and high-speed switching help reduce power consumption while allowing high current switching. Its low on-resistance ensures low voltage drop and high efficiency. All these features make it an excellent choice for applications requiring high current handling and low power consumption.

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