STF13N60M2

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The STF13N60M2 is a N-channel Enhancement Mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by STMicroelectronics Corporation. It is designed for switching operations and provides a fast switching speed with low on-state resistance and low gate-charge. The long-term reliability of this device is guaranteed by the use of planar and poly-silicon technologies.

This device is built on a monolithic structure, making it suitable for applications where space and weight savings are critical. It is available in the SOT-223 package, which may be preferable over traditional leadless-surface mount packages when dealing with higher power consumption or greater efficiencies. Additionally, the low gate-charge makes this FET ideal for switching operations where large signals must be handled with low power consumption.

The STF13N60M2 utilizes a drain-source current rating of 13A, a V_DSS of 600V, and a maximum drain-source voltage of 10V. The drain-source breakdown voltage is the voltage at which the current between the drain and source junction exceeds the breakdown current. It also features an on-resistance of just 0.01 Ohms, allowing for higher efficiencies and higher speeds. Furthermore, the total gate charge is just 11nC, making for fast switching operations.

The operating temperature range for the STF13N60M2 is –55°C to 150°C. The device is also available in leaded packages, providing superior heat dissipation capabilities when compared to the SOT-223. The maximum power dissipation is 265W, making the device suitable for use in high power environments.

The STF13N60M2 is well suited for use in a variety of applications such as power-conversion, motor-control, and HVAC systems, as well as class-D audio amplifiers, automotive loads, and power-management. This MOSFET can be used as a fast, efficient, and reliable switch in a variety of power management applications.

When using the STF13N60M2, it is important to take into account its working principles. This device is operated by the gate-to-source voltage, which must remain within the specified range in order for operation to be stable. As the gate-to-source voltage is increased, the drain-source current also increases. This device also has a relatively high gate threshold voltage of 7V, meaning that when the gate-source voltage is below this level, the drain-source current will remain close to zero. The total gate charge of the device is 11nC, and this value dictates the total charge-time of the device.

In conclusion, the STF13N60M2 is a reliable and efficient N-channel Enhancement Mode MOSFET well suited for a variety of applications. It features a low on-state resistance, which makes it highly efficient and fast. Additionally, its relatively high gate threshold voltage provides stability and improved performance. With its long-term reliability and superior thermal conductivity, this device is suitable for use in any application where fast switching and efficient operation are required.

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