STF13N65M2

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STF13N65M2, a N-channel enhancement mode MOSFET, is widely employed in a variety of applications due to its superior performance. This transistor usually has a breakdown voltage of 650V and can easily be used to switch high current and voltage signals. Furthermore, its maximum junction temperature is only 175 degrees Celsius, so it remains cool even when dealing with high-power Inputs.

The working principle of this transistor is simple. A small input voltage applied to the Gate terminal changes the resistance of the channel formed between the source and the drain and thereby, modulates the current flowing through them. In N-channel enhancement mode MOSFET, the channel between the source and the drain has high resistance and the application of a small input in the Gate terminal creates a low resistance channel. When the voltage across the Gate terminal is increased, the resistance of the channel further decreases and more current can flow through the transistor.

The STF13N65M2 has a broad range of applications, including many automotive and industrial applications. In automotive applications, it is used to protect the ECU (Engine Control Unit) and other components from overloads by providing load protection and over-voltage protection. Its wide power rating range also makes it suitable for applications such as DC-DC converters, welders, solar cells, energy management systems and power supply systems.

In industrial applications, the STF13N65M2 is suitable for use in relay control circuits, motor drives, power control switches and audio amplifiers. It is also used for switch control and pulse modulation applications. Furthermore, this MOSFET can also be employed for line regulating circuits, switching circuits, voltage controlling circuits and other applications where there is a need for high-efficiency circuitry.

The STF13N65M2 is highly reliable, has a low on-resistance, and is also RoHS compliant. This transistor also offers low switching noise and a fast rise time. Furthermore, its wide power rating range offers great flexibility in applications. Thus, this transistor is well-suited for a variety of automotive, industrial and other applications.

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