Allicdata Part #: | 497-7467-5-ND |
Manufacturer Part#: |
STF13NK50Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 11A TO-220FP |
More Detail: | N-Channel 500V 11A (Tc) 30W (Tc) Through Hole TO-2... |
DataSheet: | STF13NK50Z Datasheet/PDF |
Quantity: | 3 |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 480 mOhm @ 6.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STF13NK50Z is a three-terminal N-channel MOSFET, which belongs to the metal-oxide-semiconductor field-effect transistor (MOSFET) family. This type of device performs as a low-voltage switch mode amplifier, and its working principle is related to the applied voltage of the drain to source terminal. The STF13NK50Z is a very popular MOSFET because it requires very low gate drive current for operation, making it convenient for application in multiple applications and easy to control.
In addition, STF13NK50Z features a high breakdown voltage, a low on-state resistor, a low gate threshold and great dv/dt capabilities. All of these advantages make STF13NK50Z suitable for many applications, such as door/ long relay circuit, step-up dc/dc converters, battery-powered equipment, low-side switch and small-signal switch.
The working principle of STF13NK50Z is quite simple. The voltage applied to the drain to source terminal can turn on the device, the voltage can be any value ranging from zero up to the maximum rated value. When the voltage applied is above the gate threshold VGS, the internal silicon MOSFET structure will be weakened due to the inversion of minority charge carriers from the source to drain, resulting in an increase in current and an increase in the drain-source voltage. This effect is known as the Saturation Region.
In addition, STF13NK50Z also features an avalanche energy rating (EAS), which is a key property for higher performance electronic systems. The avalanche energy rating is a measure of how much energy is released when the device is subjected to higher voltages and higher currents, in addition to the normal ratings. These devices are designed to sustain higher transients without failing, and they have relatively low on-state resistances compared to other MOSFETs.
In conclusion, STF13NK50Z is a three-terminal N-channel MOSFET, offering a high breakdown voltage, low on-state resistor, low gate threshold, dv/dt capabilities, and great avalanche energy ratings. All of these make it suitable for many applications and easy to control. This device works in the simplest form by using a gate voltage to control the drain to source voltage.
The specific data is subject to PDF, and the above content is for reference
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