STF15N95K5 Allicdata Electronics
Allicdata Part #:

497-14215-5-ND

Manufacturer Part#:

STF15N95K5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 950V 12A TO220FP
More Detail: N-Channel 950V 12A (Tc) 30W (Tc) Through Hole TO-2...
DataSheet: STF15N95K5 datasheetSTF15N95K5 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: SuperMESH5™
Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 950V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STF15N95K5 is an enhancement mode vertical N-Channel MOSFET, often referred to as an insulated gate field-effect transistor (IGFET). It has a single-gate structure and is typically used in power applications, such as high-voltage DC--DC converters and AC-DC power supplies. IGFETs are commonly used in the automotive, consumer electronics, industrial and telecommunications industries due to their easy integration and low power losses.

The STF15N95K5 is an enhancement mode, voltage-controlled MOSFET which means that the FET is “on” or conducting when a positive voltage is applied to its gate. Its on-state resistance is low, allowing it to conduct high current, making it ideal for power applications. The STF15N95K5 is also wide-voltage rated and has a low threshold voltage, allowing it to be used in a broad range of applications.

The STF15N95K5 works by creating an inversion layer in the semiconductor material between the source and drain. When a positive voltage is applied to the gate, the inversion layer is created and a conducting path is formed between the source and drain. This allows current to flow from the source to the drain, when the voltage applied to the gate is sufficient for the FET to be driven “on”. The STF15N95K5 is also capable of operating in reverse, as it can be used to block current when the voltage applied to the gate is negative.

The STF15N95K5 is most commonly used in power-related applications, such as power supply or DC--DC converters. It can be used as either a switch or a linear device, depending on the design of the converter. In the switch configuration, the FET can be used to turn a DC converter “on” or “off” depending on the voltage applied to the gate. In the linear configuration, it can be used to control the gain or current of the DC-DC converter without having to switch the entire device on or off.

The STF15N95K5 is also used in a variety of other applications, such as RF circuits, motor drivers and high-end audio amplifiers. It is commonly used as the switch in flyback converters, which use a magnetic transformer to store energy and boost the voltage. The FET is used to switch the current, allowing the magnetic flux to build up in the coil and produce a higher output voltage. It can also be used in switching power supplies, where it is used to control the output voltage.

The STF15N95K5 is a versatile, reliable and efficient device, which makes it suitable for a wide range of applications. Its low on-state resistance and ability to control current and voltage make it ideal for power-related applications. With its easy integration and low power losses, the STF15N95K5 is an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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