STF16N65M5

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1250pF @ 100V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	45nC @ 10V
Series:	MDmesh™ V
Rds On (Max) @ Id, Vgs:	299 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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STF16N65M5 Application Field and Working Principle

The STF16N65M5 is a power metal oxide semiconductor field effect transistor (MOSFET) from STMicroelectronics. It is a high voltage, N-channel, fully isolated, single-package unit providing efficient power switching and high levels of integration for applications in the automotive, consumer and industrial markets. This MOSFET is designed to simplify power management system designs, reduce the total number of parts to be purchased and save space by reducing board-level complexity.The device features an extended drain source voltage range of up to 650 V, making it suitable for a wide variety of applications. It also has low on-state resistance to enable high power efficiency, while its temperature independent gate drive voltage makes it ideal for automotive environments. It offers fast switching times, robust protection against over temperature, and low power loss along with noise reduction.The STF16N65M5 is based on a traditional MOSFET circuit structure comprising of a gate, source and drain electrodes. When a positive voltage is applied to the gate, the drain-source channel, which is normally off, turns on and the device acts like a closed switch. The gate drives the depletion region across the channel and isolates the source from the drain. This acts as a voltage controlled resistor and allows current to flow only when the gate voltage is applied.When the gate voltage exceeds a certain level, the drain-source channel is turned off and the device acts as an open switch. The maximum drain current of the device is 1.6A and the drain source voltage can be as high as 650V.The STF16N65M5 is suitable for a wide range of applications such as motor control, electronic ballast, consumer appliances and automotive applications. For example, it can be used in automotive applications such as power control, lighting and fuel injection systems. The device features several features that improve the performance of the system design. It has reverse spike immune protection which reduces the reverse spike noise and allows the system to operate reliably at higher voltages and temperature. The device also has built-in thermal protection, which protects the device from over temperature and extends its life span.Overall, the STF16N65M5 device is a robust and reliable solution for high power MOSFET applications. Its combination of fast switching times, low on-state resistance, extended drain source voltage range and reliable protection against gate ringing and over temperature make it ideal for a variety of applications requiring efficient power switching. The STF16N65M5 also allows for a simple and cost-effective design for small package, board level layouts.

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