STF16NM50N

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STF16NM50N is a member of the STPowerMOS family of N-channel enhancement mode MOSFETs and is an ideal choice for power supply design, current control circuitry, and other low and medium voltage applications. With low turn-on resistance, high continuous drain current capability at 25°C case temperature and very low gate charge, the STF16NM50N is an excellent choice for high efficiency power switching applications.

Description

The STF16NM50N is a N-channel enhancement mode power MOSFET designed for use in electronic applications such as power management, power supply design, current control circuitry and other low and medium voltage applications. The STF16NM50N has an extremely low R DS(ON) which makes it ideal for high efficiency power switching applications. This device features a fast switching speed, along with high maximum drain current and low gate charge, making it an ideal choice for a wide range of applications.

Features

• Low R DS(ON)
• High current capability
• Very low gate charge
• High frequency operation
• High power and current capability
• Integrated ESD protection
• Lead-free (environmental friendly)

Applications

• High efficiency power switching
• Power management
• Power supply design
• Current control circuitry
• Lighting control
• Switch mode power supply development

Working Principle

The STF16NM50N is a field effect transistor (FET) which operates using the principle of a three-terminal, capacitively coupled signal voltage and current. The gate-source voltage (VGS) applied to the device gate terminals controls the gate-source capacitance. When VGS exceeds the threshold voltage, the device enters enhancement mode, causing current to flow from the drain terminal to the source terminal.

The device has a low drain-source on-resistance (RDSon) which allows for efficient switching. When the gate-source voltage is applied, the gate charge electrons enter the substrate between the gate and source and the channel of the N-type FET increases. This forms a conductive channel from drain to source, allowing current to flow between these terminals.

The source and gate terminals are connected together internally and the gate capacitance shields the channel from the gate voltage. The gate capacitance changes with the applied gate voltage, which in turn controls the drain current. As the gate voltage increases, the channel increases, allowing more current to flow as long as the drain voltage remains below the maximum rating of the device.

In addition to providing high performance, the device also provides industry leading ESD protection. The large package size and integrated ESD protection provide superior protection against ESD events. The STF16NM50N is a reliable device proven to perform in a wide range of applications.

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