STF18N60M2 Allicdata Electronics
Allicdata Part #:

497-13947-5-ND

Manufacturer Part#:

STF18N60M2

Price: $ 1.04
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V TO-220FP
More Detail: N-Channel 600V 13A (Tc) 25W (Tc) Through Hole TO-2...
DataSheet: STF18N60M2 datasheetSTF18N60M2 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.94758
Stock 1000Can Ship Immediately
$ 1.04
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 791pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
Series: MDmesh™ II Plus
Rds On (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STF18N60M2 is a power MOSFET which belongs toSTMicroelectronics\' CoolMOS series, specifically intended for use in high-voltage power conversion applications. This part is a single N-channel MOSFET in an isolated, low-profile packaging. It has a maximum drain source voltage of 600 V and an RDS(on) of 18 mOhms.

The STF18N60M2 can be used in a wide variety of applications in which power conversion efficiency is of the utmost importance. Some of these applications include servers and datacom networks, high-end notebooks, LCD TVs, and home appliances.

The CoolMOS series devices, including the STF18N60M2, are designed to provide very low on-state resistance (RDS(on)) and low gate charge, making them highly efficient and suitable for use in switching systems. The STF18N60M2 also features a gate charge and reverse gate charge which are both much lower than conventional MOSFETs.

The basic working principle of the STF18N60M2 is simple. When a gate voltage is applied, an electric field forms between the gate and the source of the device, allowing the drain current to flow. When the gate voltage is removed, the current is blocked, and the device is in a non-conducting state. As the gate voltage is increased, the device will enter a fully conducting state, greatly reducing the overall power consumption of the system.

The STF18N60M2 has a low output capacitance, low gate-to-drain feedback capacitance, and low gate-to-source capacitance. This makes it ideal for switching applications where high speed and low power consumption are required. In addition, the device has a tolerance of +25V or -12V to the absolute maximum rating, giving it the flexibility to work in a wide range of applications.

The STF18N60M2 is an industry-standard MOSFET device and is widely used in a large number of applications. It has a rugged construction, making it well suited for use in harsh environments. It is also RoHS compliant, meaning that it is safe for manufacture and use in many countries. The STF18N60M2 is an excellent choice for many high-voltage power conversion applications.

The specific data is subject to PDF, and the above content is for reference

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