STF18NM60N

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	30W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1000pF @ 50V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	35nC @ 10V
Series:	MDmesh™ II
Rds On (Max) @ Id, Vgs:	285 mOhm @ 6.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	13A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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STF18NM60N Application Field and Working Principle

The STF18NM60N is a N-Channel Field-Effect-Transistor (FET) that is designed specifically for high current, low voltage applications. It is manufactured by STMicroelectronics and is suitable for switching or controlling current between two conductors. Its features include a low resistance channel, low capacitance, improved turn-on characteristics, and high peak output current. This type of transistor is commonly used in power management circuits and is widely used in automotive, industrial, and electronic designs.

What is an FET?

A Field-Effect-Transistor (FET) is a type of semiconductor device that consists of three terminals, the source, gate and drain. The current flow between the source and drain is controlled by the amount of voltage applied to the gate terminal. The FET is a type of unipolar transistor, meaning that it conducts current in one direction only. It can be operated in either enhancement or depletion mode, depending on the voltage applied to the gate terminal. The N-Channel FETs are used in amplification, oscillator and switching applications, while the P-Channel FETs are usually used as buffers, amplifiers and switches.

How Does STF18NM60N Works?

The STF18NM60N features an N-channel enhancement mode that allows it to provide a low on-resistance and a high current capability. It is designed to operate with a gate-source voltage of -10V to +20V and a drain-source voltage of -20V to +100V. This type of FET has a high peak current capability of up to 27A at 25°C. It is also capable of withstanding a drain-source voltage of up to 100V.The STF18NM60N is commonly used in high current, low voltage applications. It can provide fast switching times and operate at high frequencies, making it suitable for pulse-width modulated (PWM) applications. It is also ideal for switching power supplies, audio amplifiers and radio frequency (RF) amplifiers.

Applications of STF18NM60N

The STF18NM60N can be used in a variety of applications, including automotive, industrial and electronic designs. It is a suitable device for switching and controlling current in power management circuits. It can also be used in motor control systems, motor drivers, and motor speed control.Furthermore, it can be used for linear regulation, voltage regulation and current regulation. It is also suitable for audio and RF amplifiers, power supplies, and consumer electronic designs.

Conclusion

The STF18NM60N is an N-Channel FET that is suitable for high current, low voltage applications. It features a low resistance channel, low capacitance, improved turn-on characteristics, and high peak output current. It can be used in a variety of applications, including automotive, industrial and electronic designs.

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