TK100E06N1,S1X Allicdata Electronics
Allicdata Part #:

TK100E06N1S1X-ND

Manufacturer Part#:

TK100E06N1,S1X

Price: $ 1.99
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N CH 60V 100A TO-220
More Detail: N-Channel 60V 100A (Ta) 255W (Tc) Through Hole TO-...
DataSheet: TK100E06N1,S1X datasheetTK100E06N1,S1X Datasheet/PDF
Quantity: 119
1 +: $ 1.80810
50 +: $ 1.45984
100 +: $ 1.31387
500 +: $ 1.02191
1000 +: $ 0.84673
Stock 119Can Ship Immediately
$ 1.99
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 255W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Series: U-MOSVIII-H
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The TK100E06N1,S1X is a single-gate field-effect transistor (FET) that is commonly used as a voltage-controlled switch in a variety of applications, from automotive and industrial control systems to consumer electronics. This particular FET is capable of being used in high-voltage environments, up to 1000V. Its features include: low on-resistance, ultra-low capacitance, and excellent ESD protection.

At the heart of the TK100E06N1,S1X is a single field-effect transistor that operates based on a simple principle. A gate voltage is applied to the FET, controlling the flow of current through the transistor channel. When the gate voltage is high, the current can flow easily, while when the gate voltage is low, the channel is effectively blocked, preventing the current from flowing. This makes the FET a convenient “on/off” switch, which can be used to control the flow of current in a circuit.

The TK100E06N1,S1X is typically used in applications where high voltage and/or high current is the main concern. Some applications it can be used in include motor controls, high-voltage switches, DC-to-DC regulators, power supplies, inverters, and uninterruptible power supplies. This FET is also often used in high-power audio amplifiers for its excellent switching characteristics.

The TK100E06N1,S1X is available in both through-hole and surface-mount packages, making it versatile for different application types. Additionally, the FET can be used in either uni-directional or bi-directional configurations, depending on the needs of the application. It is also compatible with various control connectors and can be easily interfaced with many other components.

When using the TK100E06N1,S1X FET, it is important to take into consideration the following factors: gate voltage, power ratings, temperature range, input/output resistance, and parasitic capacitance. All of these factors can affect the operation of the FET, so it is important to consider them when designing the circuit. Additionally, it is important to observe the proper safety precautions when working with high voltages, such as the use of insulated gloves and safety glasses.

In conclusion, the TK100E06N1,S1X is a high-voltage, single-gate field-effect transistor (FET) that can be easily used in a wide range of applications. Its features make it ideal for use in high-voltage environments and its compatibility with various control connectors make it suitable for many different applications. When use the FET, users must take care to consider the factors that can affect its operation, such as gate voltage, power ratings, and temperature range, in order to ensure proper operation of the FET.

The specific data is subject to PDF, and the above content is for reference

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