TK10A60W,S4X

Vgs(th) (Max) @ Id:	3.7V @ 500µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Power Dissipation (Max):	30W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	720pF @ 300V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
Series:	DTMOSIV
Rds On (Max) @ Id, Vgs:	380 mOhm @ 4.9A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	9.7A (Ta)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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TK10A60W S4X Application Field and Working Principle
The TK10A60W S4X is a type of transistor, specifically a Field-Effect Transistor (FET). It is made from a type of semiconductor material, typically Silicon (Si), and uses the properties of electric fields to control the flow of current between two terminals. A FET is different from the other type of transistor, the Bipolar Junction Transistor (BJT), as it does not require a current flow between the base and the collector for it to operate effectively. Instead, it works by using an electric field, created by gate voltage, to “switch” current from the source to the drain.The TK10A60W S4X transistor has a drain current of 6A and a drain-source voltage of 100V, making it suitable for use in a wide variety of applications. The maximum drain-source resistance is 1.8 Ω and the breakdown voltage is 800V, which makes it suitable for use in high voltage circuits. Its low on-state voltage of 1.8 V along with a low gate-source capacitance of 20V adds to its efficiency, making it a good choice for high-frequency applications.Its excellent switching characteristics make the TK10A60W S4X a popular choice for applications such as motor control, circuit protection, power management, and high frequency switching. Its applications include switching of DC and AC power, voltage regulation, and over current protection. The TK10A60W S4X can be used in both low-power, low-voltage, and high-power, high-voltage applications.The working principle of the TK10A60W S4X is based on the principle of field control. As the gate voltage increases, the electric field between the source and drain decreases, allowing more current to flow from the source to the drain. At higher gate voltages, the drain current will remain at its maximum (saturation) level until the point of breakdown, and at lower gate voltages, the drain current will decrease, regaining its linear response.It is important to note that the TK10A60W S4X is a one-way device, meaning that the current can only flow in one direction. This is extremely beneficial as it prevents unwanted backflow of current. Furthermore, the TK10A60W S4X is a voltage-controlled device, meaning that the gate voltage controls the current between the source and the drain. This is preferable over the Bipolar Junction Transistor (BJT) because of its simpler structure and greater efficiency.Overall, the TK10A60W S4X is a very useful transistor for applications that require high current, low voltage, and high frequency switching. It is versatile, easy to use, and requires minimal external components, making it a great choice for a wide range of applications. Its high efficiency and low on-state voltage also make it suitable for energy efficient circuits, so it is a great choice for those looking for an efficient, cost-effective solution in their designs.

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