TK100S04N1L,LQ Discrete Semiconductor Products |
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Allicdata Part #: | TK100S04N1LLQTR-ND |
Manufacturer Part#: |
TK100S04N1L,LQ |
Price: | $ 0.89 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 40V 100A DPAK |
More Detail: | N-Channel 40V 100A (Ta) 100W (Tc) Surface Mount DP... |
DataSheet: | TK100S04N1L,LQ Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.80593 |
Vgs(th) (Max) @ Id: | 2.5V @ 500µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK+ |
Mounting Type: | Surface Mount |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5490pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 76nC @ 10V |
Series: | U-MOSVIII-H |
Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TK100S04N1L,LQ is a transistor device that belongs to the family of field-effect transistors and metal–oxide–semiconductor field-effect transistors (MOSFETs). It is categorized under single transistors and is used in a range of electronic circuits. The TK100S04N1L,LQ has several features and capabilities that set it apart from other transistors in its family and make it an important semiconductor device.
The TK100S04N1L,LQ is a silicon-based, insulated gate semiconductor that is useful for a range of digital and analog circuit applications. It is constructed with a P-type silicon substrate and a gate, which is a lightly doped layer of material on one side of the silicon. This gate layer is then covered with insulation to control the flow of current across its surface. When the TK100S04N1L,LQ is used in an application, an external electric field is applied to the device to activate the gate and control current flow. This makes it a powerful device for controlling current in a range of circuits.
The TK100S04N1L,LQ is a single-channel n–channel MOSFET that is primarily used in switching applications due to its low power and high speed operability capabilities. It has a wide range of applications and is used to switch circuits on and off quickly without dissipating much power. It is also common in voltage attenuation, amplification, and current-limiting applications. The TK100S04N1L,LQ is capable of withstanding large amounts of current while maintaining low heat dissipation properties. This makes it an effective and reliable device in many different circuit applications.
The TK100S04N1L,LQ is known for its low power dissipation, low on-resistance, and high transistor gain. Its N-channel MOSFET technology makes it a good choice for use in high-voltage analog circuits. Additionally, its high-speed switching makes it an ideal choice for applications with high-power requirements. This transistor device can operate in frequencies up to 1.5 GHz, and its on-resistance values range from 6.5 to 8 mOhms.
The TK100S04N1L,LQ is designed for use in a variety of applications, including switching and voltage attenuation. Its low on-resistance and high gain make it an effective choice for applications requiring rapid switching, low power dissipation, and current-limiting functions. Its wide range of operating frequencies, low heat dissipation, and excellent temperature stability make it a great choice for a variety of analog and digital circuit applications.
The specific data is subject to PDF, and the above content is for reference
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