TK10V60W,LVQ Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	3.7V @ 500µA
Package / Case:	4-VSFN Exposed Pad
Supplier Device Package:	4-DFN-EP (8x8)
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	88.3W (Tc)
FET Feature:	Super Junction
Input Capacitance (Ciss) (Max) @ Vds:	700pF @ 300V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
Series:	DTMOSIV
Rds On (Max) @ Id, Vgs:	380 mOhm @ 4.9A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	9.7A (Ta)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Cut Tape (CT)

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TK10V60W,LVQ application field and working principle

The TK10V60W, LVQ Transistor, also known as Super Junction MOSFET or SJ-MOS, is an advanced device designed to offer superior electrical performance, improved noise immunity and decreased power consumption in high power applications. It is part of the Texas Instruments TI30V family of MOSFETs and can be used in a variety of applications such as lighting, motor control, automotive and home appliance. This article will provide a brief overview of the TK10V60W, LVQ application field and working principle.

Application Fields

The TK10V60W, LVQ is ideal for power management in many applications. It is used in motor control to increase motor speed and performance. Its fast switching speed and low input resistance make it an excellent choice for applications such as lighting and inverters. It is also used in automotive and home appliance applications, where the need for high power levels is paramount. The TK10V60W, LVQ is designed to provide superior performance in a wide range of operating conditions. It is capable of operating at temperatures ranging from -40°C to 150°C, making it suitable for extreme environmental conditions. Additionally, its advanced design provides superior efficiency and power delivery, with its low on-resistance providing excellent power transfer efficiency and high current handling capability.

Working Principle

The TK10V60W, LVQ is a Super Junction MOSFET, and its operation is based on the same principle as a conventional MOSFET. It is composed of three terminals – the source, gate and drain. When a voltage is applied to the gate, a corresponding electric field is generated, attracting current carriers (electrons) away from the source towards the drain. When a voltage is applied to the gate, the electric field originally generated by the source and drain is reversed. This reduces the resistance between the source and drain, allowing a current to flow through it. The TK10V60W, LVQ also features an internal diode that diverts the current from the drain to the source in the event of a reverse voltage applied to the drain. The TK10V60W, LVQ offers superior performance in terms of power delivery, noise immunity and efficiency. Its relatively low input capacitance makes it very attractive in applications where fast switching speeds are a requirement. The device is also capable of handling high currents, which makes it suitable for applications such as motor control and lighting.

Conclusion

In conclusion, the TK10V60W, LVQ is an ideal choice for a variety of applications such as motor control, lighting and automotive. Its fast switching speed and low input capacitance provide excellent power transfer efficiency and high current handling capability. Additionally, its advanced design ensures superior noise immunity and efficiency, making it suitable for extreme environmental conditions.

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