TK10J80E,S1E

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P(N)
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	250W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2000pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	46nC @ 10V
Series:	π-MOSVIII
Rds On (Max) @ Id, Vgs:	1 Ohm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TK10J80E,S1E application field and working principle

Introduction

TK10J80E S1E is a enhanced technology MOSFET transistor. It provides superior performance in low voltage circuit and can also be applied in a wide range of high current applications. It is ideal for use in digital power conversion applications, such as motor control, solar systems, power grid, and high efficiency devices. The device is manufactured by Fujitsu Semiconductor and has a wide range of features.

Application Field

TK10J80E S1E is mainly used in motor control applications and current drive applications as a switch. In particular, it is mainly used in driver circuits of motor drivers, current driver circuits of DC-DC converters and inverters. The source-drain voltage VSD of the device is optimized for motor control applications such as stepper motors, brushless motors and variable-speed motors. The high current capability of the device allows for high output voltage and the low on-resistance and gate capacitance enables fast switching. In addition, the device has very good thermal and short circuit handling capability which makes it suitable for high current, high switching frequency applications.

Working Principle

TK10J80E S1E is a metal-oxide-semiconductor field-effect transistor (MOSFET). It is a four-layer device with a source, gate and drain. The device operates as a switch by controlling the voltage applied to the gate. When a positive voltage is applied to the gate, electrons in the channel between the source and drain are attracted towards the gate and the device is turned on. When the gate is not charged, the electrons are repelled and the device is turned off. This type of device is highly efficient and can handle high switching frequency and high current.

Advantages

The main advantages of TK10J80E S1E are low on-resistance and gate capacitance which enable fast switching and high current capability. In addition, it has a low threshold voltage and can be used in a wide range of voltage applications. It is a very efficient device which provides superior performance in low voltage circuits. The device is also very small and can be used in a wide range of applications.

Conclusion

In conclusion, TK10J80E S1E is a metal-oxide-semiconductor field-effect transistor which is ideal for use in digital power conversion applications. It has a wide range of features which make it suitable for motor control, solar systems, power grid and other high efficiency devices. The device has a low on-resistance and gate capacitance which enable fast switching and a high current capability. The device is also very small and can be used in a wide range of voltage applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description