TK100E10N1,S1X Allicdata Electronics
Allicdata Part #:

TK100E10N1S1X-ND

Manufacturer Part#:

TK100E10N1,S1X

Price: $ 2.91
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 100V 100A TO220
More Detail: N-Channel 100V 100A (Ta) 255W (Tc) Through Hole TO...
DataSheet: TK100E10N1,S1X datasheetTK100E10N1,S1X Datasheet/PDF
Quantity: 1000
1 +: $ 2.63970
50 +: $ 2.11919
100 +: $ 1.93082
500 +: $ 1.56347
1000 +: $ 1.31859
Stock 1000Can Ship Immediately
$ 2.91
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 255W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Series: U-MOSVIII-H
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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TK100E10N1,S1X Application Field and Working Principle

The TK100E10N1,S1X transistor is a field effect transistor (FET) that belongs to the single type of FETs, MOSFETs (metal oxide silent field-effect transistors). As its name implies, this type of transistor concentrates its current flow between a single source and drain node. When compared to other types of transistor, FETs are known for their low input power and their wide voltage gain.

The TK100E10N1,S1X transistor is mainly used in power electronics applications. This particular device is designed to withstand high reverse voltages, and it can be used in a variety of devices such as switching power supplies, audio amplifiers, and motor controls. It is also suitable for applications in computer peripherals, cell phones, and digital cameras.

In order to understand the working principle of the TK100E10N1,S1X, it is important to understand how FETs work in general. In FETs, a gate element is used to control the flow of current between the device’s source and drain nodes. The gate is separated from the source and drain by an insulating material, and it can be thought of as a valve. The voltage applied to the gate determines the flow of electrons through the device, and it can be used to switch the device on and off.

When the TK100E10N1 device is used, the current flows through the source and drain nodes in the following way: The drain is connected to a positive supply, the source is connected to a load, and the gate is connected to a voltage source. When the voltage at the gate is higher than the source voltage, the current can flow from the drain to the source. On the other hand, when the voltage at the gate is lower than the source voltage, the current cannot flow from the drain to the source. In this way, the current through the device is controlled by the voltage at the gate.

In summary, the TK100E10N1,S1X transistor is a single type FETs, MOSFETs device that is mainly used in power electronics applications. Its working principle is based on controlling the current flow between the device’s source and drain nodes by applying a voltage to the gate. This allows the device to be used in a variety of applications, including switching power supplies, audio amplifiers, and motor controls.

The specific data is subject to PDF, and the above content is for reference

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