Allicdata Part #: | TK100E10N1S1X-ND |
Manufacturer Part#: |
TK100E10N1,S1X |
Price: | $ 2.91 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 100V 100A TO220 |
More Detail: | N-Channel 100V 100A (Ta) 255W (Tc) Through Hole TO... |
DataSheet: | TK100E10N1,S1X Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 2.63970 |
50 +: | $ 2.11919 |
100 +: | $ 1.93082 |
500 +: | $ 1.56347 |
1000 +: | $ 1.31859 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 255W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8800pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
Series: | U-MOSVIII-H |
Rds On (Max) @ Id, Vgs: | 3.4 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
TK100E10N1,S1X Application Field and Working Principle
The TK100E10N1,S1X transistor is a field effect transistor (FET) that belongs to the single type of FETs, MOSFETs (metal oxide silent field-effect transistors). As its name implies, this type of transistor concentrates its current flow between a single source and drain node. When compared to other types of transistor, FETs are known for their low input power and their wide voltage gain.
The TK100E10N1,S1X transistor is mainly used in power electronics applications. This particular device is designed to withstand high reverse voltages, and it can be used in a variety of devices such as switching power supplies, audio amplifiers, and motor controls. It is also suitable for applications in computer peripherals, cell phones, and digital cameras.
In order to understand the working principle of the TK100E10N1,S1X, it is important to understand how FETs work in general. In FETs, a gate element is used to control the flow of current between the device’s source and drain nodes. The gate is separated from the source and drain by an insulating material, and it can be thought of as a valve. The voltage applied to the gate determines the flow of electrons through the device, and it can be used to switch the device on and off.
When the TK100E10N1 device is used, the current flows through the source and drain nodes in the following way: The drain is connected to a positive supply, the source is connected to a load, and the gate is connected to a voltage source. When the voltage at the gate is higher than the source voltage, the current can flow from the drain to the source. On the other hand, when the voltage at the gate is lower than the source voltage, the current cannot flow from the drain to the source. In this way, the current through the device is controlled by the voltage at the gate.
In summary, the TK100E10N1,S1X transistor is a single type FETs, MOSFETs device that is mainly used in power electronics applications. Its working principle is based on controlling the current flow between the device’s source and drain nodes by applying a voltage to the gate. This allows the device to be used in a variety of applications, including switching power supplies, audio amplifiers, and motor controls.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
TK100L60W,VQ | Toshiba Semi... | 24.86 $ | 44 | MOSFET N CH 600V 100A TO3... |
TK10A60E,S4X | Toshiba Semi... | 1.3 $ | 142 | MOSFET N-CH 600V TO220SIS... |
TK10A60W5,S5VX | Toshiba Semi... | 1.63 $ | 292 | MOSFET N-CH 600V 9.7A TO-... |
TK100E06N1,S1X | Toshiba Semi... | 1.99 $ | 119 | MOSFET N CH 60V 100A TO-2... |
TK100A06N1,S4X | Toshiba Semi... | 2.18 $ | 108 | MOSFET N-CH 60V 100A TO-2... |
TK10E60W,S1VX | Toshiba Semi... | 2.23 $ | 146 | MOSFET N CH 600V 9.7A TO-... |
TK100A08N1,S4X | Toshiba Semi... | 3.0 $ | 55 | MOSFET N-CH 80V 214A TO22... |
TK10A80E,S4X | Toshiba Semi... | 1.93 $ | 13 | MOSFET N-CH 800V TO220SIS... |
TK100E10N1,S1X | Toshiba Semi... | 2.91 $ | 1000 | MOSFET N-CH 100V 100A TO2... |
TK100S04N1L,LQ | Toshiba Semi... | 0.89 $ | 1000 | MOSFET N-CH 40V 100A DPAK... |
TK100A10N1,S4X | Toshiba Semi... | 3.19 $ | 425 | MOSFET N-CH 100V 100A TO-... |
TK100E08N1,S1X | Toshiba Semi... | 4.46 $ | 118 | MOSFET N-CH 80V 100A TO22... |
TK10P60W,RVQ | Toshiba Semi... | 0.96 $ | 1000 | MOSFET N CH 600V 9.7A DPA... |
TK10A80W,S4X | Toshiba Semi... | 2.28 $ | 312 | MOSFET N-CH 800V 9.5A TO2... |
TK10S04K3L(T6L1,NQ | Toshiba Semi... | 0.36 $ | 1000 | MOSFET N-CH 40V 10A DPAK-... |
TK1005800000G | Amphenol Any... | 0.81 $ | 1000 | 500 TB WIR PRO 180D SOL10... |
A-TB500-TK10SB | ASSMANN WSW ... | 1.09 $ | 1000 | TERMINAL BLOCK10 Position... |
TK10A60D(STA4,Q,M) | Toshiba Semi... | 0.76 $ | 1000 | MOSFET N-CH 600V 10A TO22... |
TK10A50D(STA4,Q,M) | Toshiba Semi... | 1.23 $ | 1000 | MOSFET N-CH 500V 10A TO-2... |
TK10A60W,S4X | Toshiba Semi... | 1.25 $ | 1000 | MOSFET N CH 600V 9.7A TO-... |
TK10V60W,LVQ | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 600V 9.7A 5DF... |
TK10A55D(STA4,Q,M) | Toshiba Semi... | 1.5 $ | 1000 | MOSFET N-CH 550V 10A TO-2... |
TK10J80E,S1E | Toshiba Semi... | 2.0 $ | 1000 | MOSFET N-CH 800V TO-3PNN-... |
TK10A60W,S4VX | Toshiba Semi... | 2.25 $ | 11 | MOSFET N-CH 600V 9.7A TO-... |
TK10Q60W,S1VQ | Toshiba Semi... | 2.44 $ | 10 | MOSFET N-CH 600V 9.7A IPA... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...