Allicdata Part #: | TK10Q60WS1VQ-ND |
Manufacturer Part#: |
TK10Q60W,S1VQ |
Price: | $ 2.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 600V 9.7A IPAK |
More Detail: | N-Channel 600V 9.7A (Ta) 80W (Tc) Through Hole I-P... |
DataSheet: | TK10Q60W,S1VQ Datasheet/PDF |
Quantity: | 10 |
1 +: | $ 2.19870 |
Vgs(th) (Max) @ Id: | 3.7V @ 500µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 80W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 300V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | DTMOSIV |
Rds On (Max) @ Id, Vgs: | 430 mOhm @ 4.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.7A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK10Q60W,S1VQ is a surface-mounted, high-voltage, low-cost insulated gate bipolar transistor (IGBT) module. It is a major product of Matsushita Electric Industrial Co., Ltd. It is characterized by a very low on-resistance, fast switching speed, and low switching losses.The TK10Q60W,S1VQ is designed for high-efficiency power applications of up to 600 Volts. It has power switching capacitance of up to 16A/µs. The maximum continuous output current is rated at 10A.
Application Field
The most typical application field of the TK10Q60W,S1VQ is in the automotive industry. It is used to control movement and speed control in electric vehicles and forklifts, and can be used in power systems of cars, buses, and in the industrial field. It has also been used in robots and in medical equipment such as electronic infusion pumps and medical apparatus, as well as in microwave ovens.
Working Principle
The TK10Q60W,S1VQ is a type of insulated gate bipolar transistor (IGBT). It operates as a conventional MOSFET, with a transistor gate separating the source and drain regions of the device. The gate is protected by an insulated gate dielectric layers and is used to control the flow of current between the source and the drain. The gate is connected to the source through an insulated gate field effect transistor (IGFET), and is used to switch the IGBT between on and off states.The TK10Q60W,S1VQ also includes built-in transient suppressor protection, dV/dt protection, overvoltage protection, as well as thermal shutdown protection.
In summary, the TK10Q60W,S1VQ is a high-voltage, low-cost insulated gate bipolar transistor (IGBT) module designed for high-efficiency power applications of up to 600 Volts. It is characterized by a very low on-resistance, fast switching speed, and low switching losses, making it ideal for applications in automotive, industrial, medical, and microwave ovens. Its working principle is that of a conventional MOSFET, with a transistor gate separating the source and drain regions of the device, and being protected by an insulated gate dielectric layers and used to control the flow of current between the source and the drain.
The specific data is subject to PDF, and the above content is for reference
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