TK10Q60W,S1VQ Allicdata Electronics
Allicdata Part #:

TK10Q60WS1VQ-ND

Manufacturer Part#:

TK10Q60W,S1VQ

Price: $ 2.44
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 600V 9.7A IPAK
More Detail: N-Channel 600V 9.7A (Ta) 80W (Tc) Through Hole I-P...
DataSheet: TK10Q60W,S1VQ datasheetTK10Q60W,S1VQ Datasheet/PDF
Quantity: 10
1 +: $ 2.19870
Stock 10Can Ship Immediately
$ 2.44
Specifications
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 80W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 300V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Series: DTMOSIV
Rds On (Max) @ Id, Vgs: 430 mOhm @ 4.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The TK10Q60W,S1VQ is a surface-mounted, high-voltage, low-cost insulated gate bipolar transistor (IGBT) module. It is a major product of Matsushita Electric Industrial Co., Ltd. It  is characterized by a very low on-resistance, fast switching speed, and low switching losses.The TK10Q60W,S1VQ is designed for high-efficiency power applications of up to 600 Volts. It has power switching capacitance of up to 16A/µs. The maximum continuous output current is rated at 10A.

Application Field

The most typical application field of the TK10Q60W,S1VQ is in the automotive industry. It is used to control movement and speed control in electric vehicles and forklifts, and can be used in power systems of cars, buses, and in the industrial field. It has also been used in robots and in medical equipment such as electronic infusion pumps and medical apparatus, as well as in microwave ovens.

Working Principle

The TK10Q60W,S1VQ is a type of insulated gate bipolar transistor (IGBT). It operates as a conventional MOSFET, with a transistor gate separating the source and drain regions of the device. The gate is protected by an insulated gate dielectric layers and is used to control the flow of current between the source and the drain. The gate is connected to the source through an insulated gate field effect transistor (IGFET), and is used to switch the IGBT between on and off states.The TK10Q60W,S1VQ also includes built-in transient suppressor protection, dV/dt protection, overvoltage protection, as well as thermal shutdown protection.

In summary, the TK10Q60W,S1VQ is a high-voltage, low-cost insulated gate bipolar transistor (IGBT) module designed for high-efficiency power applications of up to 600 Volts. It is characterized by a very low on-resistance, fast switching speed, and low switching losses, making it ideal for applications in automotive, industrial, medical, and microwave ovens. Its working principle is that of a conventional MOSFET, with a transistor gate separating the source and drain regions of the device, and being protected by an insulated gate dielectric layers and used to control the flow of current between the source and the drain.

The specific data is subject to PDF, and the above content is for reference

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