Allicdata Part #: | TK10A55D(STA4QM)-ND |
Manufacturer Part#: |
TK10A55D(STA4,Q,M) |
Price: | $ 1.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 550V 10A TO-220SIS |
More Detail: | N-Channel 550V 10A (Ta) 45W (Tc) Through Hole TO-2... |
DataSheet: | TK10A55D(STA4,Q,M) Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.34581 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | π-MOSVII |
Rds On (Max) @ Id, Vgs: | 720 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 550V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK10A55D (STA4,Q,M) is a single-channel enhancement-mode Field Effect Transistor (FET), which is a type of transistor used to amplify or switch electronic signals. FETs are widely used in analog and digital circuits due to their uniformity, scalability, and small size. FETs are made out of semiconductor materials and operate on the principles of the MOS (metal-oxide-semiconductor) process.
The TK10A55D (STA4,Q,M) FET is a N-channel depletion-mode FET. It has a maximum on-state drain current (ID) of 10A, a maximum on-state drain-source voltage (VDS) of 55V, and a total gate charge (Qg) of 4N. The device is packaged in a TO-220AB package. The FET features over-voltage protection, current-limiting protection, temperature protection, and low gate-charge design. The device is designed for use in automotive applications, such as power controls and switching power supplies.
The working principle of a N-channel depletion-mode FET such as the TK10A55D (STA4,Q,M) is quite simple. When the gate voltage VGS is applied, it creates an electric field which attracts free electrons (in the N-channel) to the gate region. This increases the conductivity of the device and allows current to flow between the source and the drain. The higher the applied gate voltage is, the larger the current that can flow through the FET.
The TK10A55D (STA4,Q,M) FET can be used in a variety of automotive applications, including lighting controls, load switches, relays, and power converters. The FET is also used in portable battery-powered applications such as mobile phones and laptop computers. The low gate-charge design makes it well suited for these applications, as it allows for low quiescent power consumption.
The TK10A55D (STA4,Q,M) FET is a reliable device that can handle high current loads, and its over-voltage protection and current-limiting features make it suitable for use in automotive applications. Its low gate-charge design allows it to operate at low power consumption, which makes it suitable for use in portable battery-powered applications. Overall, this device offers a cost effective solution for automotive, commercial, and home applications.
The specific data is subject to PDF, and the above content is for reference
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