Allicdata Part #: | TK100L60WVQ-ND |
Manufacturer Part#: |
TK100L60W,VQ |
Price: | $ 24.86 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N CH 600V 100A TO3P(L) |
More Detail: | N-Channel 600V 100A (Ta) 797W (Tc) Through Hole TO... |
DataSheet: | TK100L60W,VQ Datasheet/PDF |
Quantity: | 44 |
1 +: | $ 22.60440 |
10 +: | $ 20.90910 |
100 +: | $ 17.85750 |
Vgs(th) (Max) @ Id: | 3.7V @ 5mA |
Package / Case: | TO-3PL |
Supplier Device Package: | TO-3P(L) |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 797W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 15000pF @ 30V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 360nC @ 10V |
Series: | DTMOSIV |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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TK100L60W,VQ Application Field and Working Principle
The TK100L60W,VQ is a type of transistor, also known as an insulated gate bipolar transistor (IGBT). This type of transistor is being used more and more in today\'s circuits and systems. The TK100L60W,VQ is one of the most popular IGBTs out there due to its high efficiency and reliability, making it one of the most sought after transistors.
Overview
The TK100L60W,VQ transistor is a three-terminal, voltage-controlled transistor, which is built on a silicon-based wafer. It is mainly used for switching and amplifier applications. The main difference between this transistor and other FETs is that it has an insulated gate, which allows it to be used at high temperatures and reduce power dissipation. It has an advantage over regular FETs due to its higher breakdown voltage, fast switching times, and low power consumption. The TK100L60W,VQ has a rating of 60 volts and can handle 800 amps of current in a single operation.
Working Principle
The TK100L60W,VQ is an insulated-gate bipolar transistor (IGBT) which operates on the principle of majority carrier conduction. The three terminals of the device are the gate terminal, which controls the turn-on and turn-off of the device, the source terminal, which is the source of the electrical current and the drain terminal, which is the load side of the device. It uses a single DC voltage to control the device\'s on-off state. When an external voltage is applied to the gate, it attracts electrons from the source terminal, reducing the resistance between the source and drain terminals and allowing current to flow from the source to the drain. When the gate voltage is turned off, the electrons are repelled, creating an open circuit with no current flowing.
Applications
The TK100L60W,VQ has a wide range of applications in both consumer electronics and industrial products. In consumer electronics, it is used in power supplies, laptop chargers, and other switching applications. In industrial products such as industrial robotics, control systems, and power supplies, IGBTs are used to efficiently control and switch large amounts of electricity and power. The higher breakdown voltage, fast switching capabilities, and low power consumption makes the TK100L60W,VQ a great choice for these applications. The TK100L60W,VQ can also be used in power electronics, such as motor drives, solar inverters, and motor control systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
TK100L60W,VQ | Toshiba Semi... | 24.86 $ | 44 | MOSFET N CH 600V 100A TO3... |
TK10A60E,S4X | Toshiba Semi... | 1.3 $ | 142 | MOSFET N-CH 600V TO220SIS... |
TK10A60W5,S5VX | Toshiba Semi... | 1.63 $ | 292 | MOSFET N-CH 600V 9.7A TO-... |
TK100E06N1,S1X | Toshiba Semi... | 1.99 $ | 119 | MOSFET N CH 60V 100A TO-2... |
TK100A06N1,S4X | Toshiba Semi... | 2.18 $ | 108 | MOSFET N-CH 60V 100A TO-2... |
TK10E60W,S1VX | Toshiba Semi... | 2.23 $ | 146 | MOSFET N CH 600V 9.7A TO-... |
TK100A08N1,S4X | Toshiba Semi... | 3.0 $ | 55 | MOSFET N-CH 80V 214A TO22... |
TK10A80E,S4X | Toshiba Semi... | 1.93 $ | 13 | MOSFET N-CH 800V TO220SIS... |
TK100E10N1,S1X | Toshiba Semi... | 2.91 $ | 1000 | MOSFET N-CH 100V 100A TO2... |
TK100S04N1L,LQ | Toshiba Semi... | 0.89 $ | 1000 | MOSFET N-CH 40V 100A DPAK... |
TK100A10N1,S4X | Toshiba Semi... | 3.19 $ | 425 | MOSFET N-CH 100V 100A TO-... |
TK100E08N1,S1X | Toshiba Semi... | 4.46 $ | 118 | MOSFET N-CH 80V 100A TO22... |
TK10P60W,RVQ | Toshiba Semi... | 0.96 $ | 1000 | MOSFET N CH 600V 9.7A DPA... |
TK10A80W,S4X | Toshiba Semi... | 2.28 $ | 312 | MOSFET N-CH 800V 9.5A TO2... |
TK10S04K3L(T6L1,NQ | Toshiba Semi... | 0.36 $ | 1000 | MOSFET N-CH 40V 10A DPAK-... |
TK1005800000G | Amphenol Any... | 0.81 $ | 1000 | 500 TB WIR PRO 180D SOL10... |
A-TB500-TK10SB | ASSMANN WSW ... | 1.09 $ | 1000 | TERMINAL BLOCK10 Position... |
TK10A60D(STA4,Q,M) | Toshiba Semi... | 0.76 $ | 1000 | MOSFET N-CH 600V 10A TO22... |
TK10A50D(STA4,Q,M) | Toshiba Semi... | 1.23 $ | 1000 | MOSFET N-CH 500V 10A TO-2... |
TK10A60W,S4X | Toshiba Semi... | 1.25 $ | 1000 | MOSFET N CH 600V 9.7A TO-... |
TK10V60W,LVQ | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 600V 9.7A 5DF... |
TK10A55D(STA4,Q,M) | Toshiba Semi... | 1.5 $ | 1000 | MOSFET N-CH 550V 10A TO-2... |
TK10J80E,S1E | Toshiba Semi... | 2.0 $ | 1000 | MOSFET N-CH 800V TO-3PNN-... |
TK10A60W,S4VX | Toshiba Semi... | 2.25 $ | 11 | MOSFET N-CH 600V 9.7A TO-... |
TK10Q60W,S1VQ | Toshiba Semi... | 2.44 $ | 10 | MOSFET N-CH 600V 9.7A IPA... |
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