Allicdata Part #: | TK100E08N1S1X-ND |
Manufacturer Part#: |
TK100E08N1,S1X |
Price: | $ 4.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 80V 100A TO220 |
More Detail: | N-Channel 80V 100A (Ta) 255W (Tc) Through Hole TO-... |
DataSheet: | TK100E08N1,S1X Datasheet/PDF |
Quantity: | 118 |
1 +: | $ 4.05720 |
50 +: | $ 3.26025 |
100 +: | $ 2.97045 |
500 +: | $ 2.40534 |
1000 +: | $ 2.02860 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 255W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9000pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Series: | U-MOSVIII-H |
Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Ta) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK100E08N1,S1X is a single MOSFET (metal-oxide-semiconductor field-effect transistor). It is a type of transistor used to switch or amplify electrical signals. In contrast to bipolar junction transistors, which rely on the action of both hole and electron currents, MOSFETs are unipolar devices, meaning that they only utilize one type of field to allow conduction.
The TK100E08N1,S1X is a power MOSFET, so it has a higher voltage and current capacity than a standard MOSFET. It is used when a high-power load needs to be controlled by a low-power input signal. It is often used in circuits that require switching or high-frequency sensing, such as automotive electronics and motor control circuits. This MOSFET also has a low gate threshold voltage and high input impedance, making it ideal for applications that require a low-power input signal.
The TK100E08N1,S1X is typically packaged in a small, surface-mount format, making it easy to install in tight spaces. It is designed to handle up to 8 amperes of continuous drain current and 60 volts of drain source voltage. This makes it well suited for high-current applications such as motor speed and lighting control.
The TK100E08N1,S1X works on the principle of a depletion mode MOSFET. A depletion mode MOSFET is one in which the current is turned off when negative voltage is applied to the gate. This means that the circuit is normally closed (on) unless the voltage at the gate is set to a negative value. This makes the TK100E08N1,S1X useful for applications where the user wants to control the current flow with a low-power input signal.
The TK100E08N1,S1X is a versatile MOSFET that has a variety of applications. It is used in motor controllers, LED lighting circuits, home automation systems, power supplies, and other power switching applications. It is also used in high-voltage, high-current applications such as motor speed control and power conditioning.
The TK100E08N1,S1X is an ideal choice for low-power applications that require a low-voltage, high-current MOSFET. Its low gate threshold voltage, high input impedance, and small form factor make it an excellent choice for use in a variety of applications. Its depletion mode operation and high current capacity make it suitable for use in high-power electronic circuits.
The specific data is subject to PDF, and the above content is for reference
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