TSM250N02DCQ RFG

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Transistors - FETs, MOSFETs - Arrays

The TSM250N02DCQ is a high-performance chip-scale package (CSP) device with multiple MOSFET array of the same type which can be paralleled in circuit configuration. It is a vertical DMOS power transistor with integrated protection diodes. Besides, this device has high pulse width modulation (PWM) control, fast turn-on and turn-off switching. What’s more, its low drain-source on-state resistance (RDS) leading to low conduction loss and fast operating frequency. Furthermore, its bottom-side pad-ring reduces stray inductance. This device also has integral safe-operating-area (SOA) circuits that function to reduce system-level thermal damage.

Application Field and Working Principle

The TSM250N02DCQ is suitable for DC/DC converter, VRMs, LLC resonant converters and multi-phase regulators used in portable applications such as notebook, tablet PC, and other mobile applications. The TSM250N02DCQ relies on a 200V 35A MOSFET technology which results in high energy efficiency and high frequency operation. Moreover, due to its high-performance CSP design, the device reduces parasitic inductance and improves EMI performance. Moreover, this device is ideal for many designs featuring wireless base station power supplies.

The working principle of the TSM250N02DCQ is based on the MOSFET array integrated into the device. The way it works is that it has several MOSFETs in parallel combined, allowing a larger current capacity and more efficient heat dissipation. The combined MOSFET array amplifies the signal and drives the load consistently at high efficiency. Furthermore, its advanced thermal design provides an effective channel to efficiently transfer the heat from the device, reducing the temperature and improving system reliability.

The package of TSM250N02DCQ is made up of a multi-chip array (MCPA) with a single die containing the MOSFETs, protection diodes, a gate driver, and a power control IC. This integration greatly simplifies the design, saving space and cost while at the same time reducing the parasitic elements, such as the inductance, thus minimizing the losses and improving the efficiency of the system. Furthermore, it can be used as a stand-alone device or as part of a larger power system.

In conclusion, the TSM250N02DCQ features several benefits, such as advanced thermal design, low losses, integrated protection diodes and fast switching speed, making it the perfect choice for high-frequency and performance applications. The CSP package reduces bulky parasitic elements that often cause losses, resulting in superb performance without requiring much space.

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