Allicdata Part #: | TSM2307CXRFGTR-ND |
Manufacturer Part#: |
TSM2307CX RFG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET P-CHANNEL 30V 3A SOT23 |
More Detail: | P-Channel 30V 3A (Tc) 1.25W (Ta) Surface Mount SOT... |
DataSheet: | TSM2307CX RFG Datasheet/PDF |
Quantity: | 30000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 565pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 95 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TSM2307CX RFG is a high-speed dual N-channel enhancement mode Field Effect Transistor (FET). This type of transistor is especially useful for its high level of reliability and minimal temperature sensitivity. It is designed to be used in applications such as pulse power, high-speed switching and power conversions.
The TSM2307CX RFG is a type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) that utilizes a dual N-channel structure. These MOSFETs are renowned for their excellent signal-handling performance and minimal input capacitance level. The TSM2307CX RFG also comes equipped with a highly reliable "floating source" design.
The TSM2307CX RFG is designed specifically for radio frequency (RF) applications, such as those found in mobile communication base station amplifiers. This design is tailored to optimize the transistor\'s performance in this type of application, where the device must perform precise levels of signal distortion, power dissipation, and thermal management. Furthermore, the RF capabilities allow the transistor to be used in high frequency applications, such as those found in radar and satellite applications.
The working principle of the TSM2307CX RFG is based on the same principles as other MOSFETs. The gate terminal is used as the input to control the flow of electrons from the source terminal to the drain terminal. The gate terminal can be negatively charged, causing a depletion region to form around the surface of the transistor, thereby increasing the resistance from source to drain. This decrease in resistance reduces the amount of current that can flow through the transistor and is the primary method of control for the TSM2307CX RFG.
The TSM2307CX RFG is an ideal choice for radio frequency applications due to its excellent noise performance and reliability. This type of transistor is also highly efficient and consumes less power than some of its competitors. Furthermore, its low input capacitance makes it ideal for use as an amplifier for higher frequency signals. The TSM2307CX RFG is also highly effective at dissipating heat, making it an ideal choice for applications operating at high temperatures.
In conclusion, the TSM2307CX RFG is an excellent choice for applications such as radio frequency communication, high frequency switching, or power conversions. Its dual N-channel design and high level of reliability make it a prime candidate for these types of application. Its low input capacitance and excellent noise performance make it ideal for amplifying higher frequency signals. Finally, its highly efficient power management and thermal management capabilities make it an ideal fit for applications operating at high temperatures.
The specific data is subject to PDF, and the above content is for reference
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