
Allicdata Part #: | TSM2N7000KCTB0G-ND |
Manufacturer Part#: |
TSM2N7000KCT B0G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CHANNEL 60V 300MA TO92 |
More Detail: | N-Channel 60V 300mA (Ta) 400mW (Ta) Through Hole T... |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.05324 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 400mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7.32pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 0.4nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 100mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 300mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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The TSM2N7000KCT B0G is a depletion type MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is widely used in various electronic devices and systems due to its fast response time and low input capacitance. In this article, we will discuss the application field and working principle of the TSM2N7000KCT B0G.
Application Field
The TSM2N7000KCT B0G is primarily used for high-frequency switching applications such as in radio frequency (RF) amplifier circuits. It is ideal for such applications due to its ultra-low On-resistance, low gate threshold voltage and fast switching speed. Furthermore, it has very low input capacitance, making it suitable for high-speed switching in a wide variety of electronic circuits. It is also used in other high-frequency applications such as linear amplifiers, power switching, and DC/DC converters.
Working Principle
The TSM2N7000KCT B0G is a depletion type MOSFET, meaning it has a negative gate voltage threshold. This means that the gate voltage must be below the threshold before the MOSFET can conduct current between the source and the drain. When the gate voltage is below the threshold, the MOSFET is in the On-state, and current flows between the source and drain terminals. When the gate voltage is above the threshold, the MOSFET is in the Off-state, and no current can flow between the source and drain terminals.
In addition to this, the TSM2N7000KCT B0G also has a very low On-resistance. This means that when the MOSFET is in the On-state, it has a very low resistance between the source and drain terminals, allowing for a high-speed switching of current. The TSM2N7000KCT B0G also has a very low input capacitance, meaning that it can switch very rapidly, allowing for high-speed operation in various electronic circuits.
Conclusion
The TSM2N7000KCT B0G is a depletion type MOSFET that is widely used in high-frequency switching applications. It has a negative gate voltage threshold, low On-resistance and low input capacitance, making it ideal for fast switching applications. With its wide variety of uses, it is a highly versatile device that is essential for many electronic circuits.
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