TSM2NB60CP ROG Allicdata Electronics
Allicdata Part #:

TSM2NB60CPROGTR-ND

Manufacturer Part#:

TSM2NB60CP ROG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET N-CHANNEL 600V 2A TO252
More Detail: N-Channel 600V 2A (Tc) 44W (Tc) Surface Mount TO-2...
DataSheet: TSM2NB60CP ROG datasheetTSM2NB60CP ROG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 44W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 249pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The TSM2NB60CP ROG is a single N-channel Enhancement Mode MOSFET. It is a type of field-effect transistor with the ability to amplify signals, which can be regulated by an input voltage. How these transistors work and the applications they can be used for can be broken down some different steps.

The most important part of the MOSFET is the gate. The gate is a semiconductor material which can be used to control the flow of charge carriers, either electrons or holes. When the device is off, the gate is insulated from the channel so that no current can pass through. By applying a voltage to the gate, the insulation layer is reduced and current can pass through the channel.

The source of the device is the side of the channel where the current enters the transistor. It is connected to the ground, which acts as a reference potential. The drain is the side of the channel where the current exits the transistor. It is connected to the voltage source, which determines the voltage that the transistor amplifies.

The TSM2NB60CP ROG provides the necessary resistance between the source and drain, allowing the voltage potential to develop across the transistor. The cutoff frequency of the transistor is a function of the drain-source resistance, gate-source capacitance, and drain-source capacitance.

The TSM2NB60CP ROG can be used in a variety of applications. It is suitable for use in low-power switching, as it switches on quickly and has a low voltage drop. It can also be used as a voltage level shift and driver, as it has low input capacitance and can be biased with low resistors. The transistor can also be used to control the flow of current through a load, making it useful in applications such as motor drives.

In conclusion, the TSM2NB60CP ROG is a single N-channel Enhancement Mode MOSFET that can be used in a variety of applications including low-power switching, voltage level shifting, and current control. It is easy to use and provides a low voltage drop and low input capacitance. The device is suitable for a range of applications and can be used to drive motors, control currents, and switch over high voltage potentials.

The specific data is subject to PDF, and the above content is for reference

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