TSM2301ACX RFG

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	700mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	480pF @ 15V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	4.5nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	130 mOhm @ 2.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	2.8A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The TSM2301ACX is a high performance Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) from Toshiba. This device is a single N-Channel MOSFET that is designed specifically for RF applications. It features low power consumption and low on-resistance, making it an ideal choice for a wide range of applications. In this article, we\'ll take a look at the TSM2301ACX\'s application field and working principle.

Application Field

The TSM2301ACX is suitable for a variety of RF applications, including RF switches, RF amplifiers, and RF mixers. It is commonly used in mobile base stations and other high power applications because of its low-power consumption and high frequency capabilities. The device also has a low gate capacitance, making it suitable for applications that require high speed switching.

Working Principle

The TSM2301ACX is a single N-Channel MOSFET, which means that it can conduct or block current depending on the potential difference between its gate and source terminals. When a positive voltage is applied to the gate terminal, the source-to-drain path is opened and a current can flow through the device. Conversely, when the gate voltage is removed, the source-to-drain path is closed and no current can flow through the device.The device\'s low power consumption is achieved through its low threshold voltage. The device\'s gate can be switched on with a voltage as low as 1 V, making it suitable for applications that require low power consumption. Additionally, the device features a low gate capacitance, which helps to reduce loading of the input circuit and increases the device\'s switching speed.

Conclusion

The TSM2301ACX is an N-Channel MOSFET from Toshiba that is specifically designed for RF applications. It features a low power consumption and low on-resistance, making it an ideal choice for a wide range of applications. Furthermore, its low threshold voltage and low gate capacitance provide advantages for applications that require low power consumption and high switching speeds.

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