TSM2314CX RFG Allicdata Electronics
Allicdata Part #:

TSM2314CXRFGTR-ND

Manufacturer Part#:

TSM2314CX RFG

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET N-CHANNEL 20V 4.9A SOT23
More Detail: N-Channel 20V 4.9A (Tc) 1.25W (Ta) Surface Mount S...
DataSheet: TSM2314CX RFG datasheetTSM2314CX RFG Datasheet/PDF
Quantity: 9000
3000 +: $ 0.08966
Stock 9000Can Ship Immediately
$ 0.1
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 33 mOhm @ 4.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The TSM2314CX RFG is a type of field effect transistor (FET) with a single gate design. As the name implies, this type of transistor is designed to control the flow of electrical current between its source and drain terminals while also allowing for a varying resistance level gain control of the current that passes through it.

This type of transistor is well-suited for use in RF power amplifiers that require a large amount of current flow as well as a high degree of gain control. The single-gate design of the TSM2314CX RFG allows for more precise control of circuit gain levels when compared to other types of FETs, such as double-gate FETs.

The main advantage of using this transistor is that it operates at very low voltages, making it ideal for applications that require the use of high-powered transistors without having to use a high-voltage power supply. In addition, the use of this transistor provides a low amount of power dissipation and low losses, meaning that it is one of the most reliable transistors available on the market.

The TSM2314CX RFG also has a wide range of applications in radio frequency amplifiers, RF front ends, low noise amplifiers, and other types of circuits. It is also commonly used in radio and television receivers, as well as ensuring reliable power supply to various commercial and industrial equipment.

The working principle of the TSM2314CX RFG is quite simple. When the gate voltage is applied, the FET allows for a current to flow between its source and drain terminals, with the magnitude of the current determined by the gate voltage. The gate is a metal-oxide passive element that controls the current passing through the transistor. By using a suitable gate voltage, it is thus possible to control the level of current passing through the FET without relying on the gate voltage alone.

The gate voltage of a TSM2314CX RFG is typically set using a current source and a resistor. The resistor is used to control the amount of current that passes through the gate, while the current source provides the necessary voltage to control the gain of the circuit. This allows engineers to adjust the circuit gain levels quickly and accurately.

The TSM2314CX RFG is an excellent choice for a wide range of applications that require a reliable and effective transistor. It is highly efficient, has a low amount of power dissipation, and allows for precise and accurate gain control. As such, it is used widely in a variety of RF applications, and is likely to remain a popular choice in the future.

The specific data is subject to PDF, and the above content is for reference

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