Allicdata Part #: | TSM2305CXRFGTR-ND |
Manufacturer Part#: |
TSM2305CX RFG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET P-CHANNEL 20V 3.2A SOT23 |
More Detail: | P-Channel 20V 3.2A (Ta) 1.25W (Ta) Surface Mount S... |
DataSheet: | TSM2305CX RFG Datasheet/PDF |
Quantity: | 21000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 990pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 3.2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TSM2305CX RFG family of products is a group of single-discrete MOSFETS developed specifically for transistor-based wireless applications. It is designed to provide a low noise solution for mobile broadband applications, allowing better length and power efficiency compared to a discrete approach. It also features a wide range of drive and gate capabilities and can be used for a variety of applications, from point-to-point to wide area cellular systems.
The TSM2305CX RFG is a single-discrete MOSFET device. This is different from an integrated circuit that features several interconnected transistors. A discrete MOSFET will typically feature one or two semiconductor devices that act as the gain element of a particular circuit. The device comes in a range of sizes and gate voltage ranges, with the minimum gate voltage of the TSM2305CX RFG being 3V.
The TSM2305CX RFG’s working principle is fairly simple. It is a field-effect transistor, based on the same principle as other transistors. In this case, the gate terminal of the device is used to control the current flowing between the drain and source terminals. By controlling the voltage between the gate and the source, the current between the drain and the source can be controlled, which is then used in various amplification circuits.
The typical application field for the TSM2305CX RFG device is RF power-related products. It is often used as the gain element in an RF amplifier, as its low noise figure makes it an ideal choice for power amplification applications. These devices can also be used in other applications, such as providing gain in analog video circuits and even as hairpin filter banks.
The TSM2305CX RFG is commonly used in various wireless applications, such as in Wi-Fi and other data communication networks. It is used in various mobile phone and broadband systems, providing power amplification and signal linearization. It is also used in high power RF applications, where the device’s high frequency performance is utilized in applications such as broadcast, point-to-point radio, and satellite communication.
In conclusion, the TSM2305CX RFG is an excellent choice for transistor-based wireless applications. It is a single-discrete MOSFET that provides low noise figures and a range of gate and drive capabilities. It is used in a variety of applications, including RF power products, analog video circuits, and data communication networks. The working principle is fairly simple, as it uses the gate terminal to control the current flowing between the drain and source terminals. This makes it an ideal choice for various RF power applications, providing power amplification, signal linearization, and high frequency performance.
The specific data is subject to PDF, and the above content is for reference
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