TSM2NB60CH C5G Allicdata Electronics
Allicdata Part #:

TSM2NB60CHC5G-ND

Manufacturer Part#:

TSM2NB60CH C5G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET N-CHANNEL 600V 2A TO251
More Detail: N-Channel 600V 2A (Tc) 44W (Tc) Through Hole TO-25...
DataSheet: TSM2NB60CH C5G datasheetTSM2NB60CH C5G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251 (IPAK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 44W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 249pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The TSM2NB60CH C5G is a high-performance, unipolar power MOSFET in a TO-220AB 5-pin plastic package. It is particularly suitable for high-frequency switching applications. It has a wide temperature range, fast switching speed, excellent thermal stability and easy-to-use features. It is a very popular choice for use in an extremely wide variety of applications, from portable devices to high-power industrial systems.

The TSM2NB60CH C5G is based on a single N-channel depletion mode MOSFET (metal–oxide–semiconductor field-effect transistor). It is constructed with a single depletion mode and uses a layout optimized for improved performance, lower losses, and higher efficiency. The TSM2NB60CH C5G has an identical footprint to the TSM2NB60CH C4G and can be used as a plug-in replacement in most applications.

The TSM2NB60CH C5G is a high-performance, low-loss N-channel MOSFET. The device has an on-state resistance of 1.4 ohms, a breakdown voltage of 5.9 volts and a maximum drain-source voltage (VDSS) of 60 volts. It is capable of supplying a high current and is able to switch off in 1 microsecond or less. The device is also capable of delivering high peak drain current in pulsed applications.

The MOSFET enables high-speed switching applications, such as power switching, high-speed amplifiers, and DC-DC converters as well as high current applications such as switching power supplies and automotive relays. The device is suitable for use in systems that require tight control of on-state resistance or rise and fall times. The device is able to supply a current capability up to 25A, making it suitable for motor control, power control and other high-load applications.

The TSM2NB60CH C5G is a unipolar power MOSFET with a high breakdown voltage, low on-state resistance and fast switching speed. Its high current capability makes it the ideal choice for power control and high-load applications. The device is also suitable for high-speed switching applications, such as power switching, high-speed amplifiers, and DC-DC converters. Due to its wide temperature range, fast switching speed and excellent thermal stability, it is a popular choice for use in a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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