| Allicdata Part #: | TSM2NB60CHC5G-ND |
| Manufacturer Part#: |
TSM2NB60CH C5G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | MOSFET N-CHANNEL 600V 2A TO251 |
| More Detail: | N-Channel 600V 2A (Tc) 44W (Tc) Through Hole TO-25... |
| DataSheet: | TSM2NB60CH C5G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | TO-251 (IPAK) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 44W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 249pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 9.4nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 4.4 Ohm @ 1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The TSM2NB60CH C5G is a high-performance, unipolar power MOSFET in a TO-220AB 5-pin plastic package. It is particularly suitable for high-frequency switching applications. It has a wide temperature range, fast switching speed, excellent thermal stability and easy-to-use features. It is a very popular choice for use in an extremely wide variety of applications, from portable devices to high-power industrial systems.
The TSM2NB60CH C5G is based on a single N-channel depletion mode MOSFET (metal–oxide–semiconductor field-effect transistor). It is constructed with a single depletion mode and uses a layout optimized for improved performance, lower losses, and higher efficiency. The TSM2NB60CH C5G has an identical footprint to the TSM2NB60CH C4G and can be used as a plug-in replacement in most applications.
The TSM2NB60CH C5G is a high-performance, low-loss N-channel MOSFET. The device has an on-state resistance of 1.4 ohms, a breakdown voltage of 5.9 volts and a maximum drain-source voltage (VDSS) of 60 volts. It is capable of supplying a high current and is able to switch off in 1 microsecond or less. The device is also capable of delivering high peak drain current in pulsed applications.
The MOSFET enables high-speed switching applications, such as power switching, high-speed amplifiers, and DC-DC converters as well as high current applications such as switching power supplies and automotive relays. The device is suitable for use in systems that require tight control of on-state resistance or rise and fall times. The device is able to supply a current capability up to 25A, making it suitable for motor control, power control and other high-load applications.
The TSM2NB60CH C5G is a unipolar power MOSFET with a high breakdown voltage, low on-state resistance and fast switching speed. Its high current capability makes it the ideal choice for power control and high-load applications. The device is also suitable for high-speed switching applications, such as power switching, high-speed amplifiers, and DC-DC converters. Due to its wide temperature range, fast switching speed and excellent thermal stability, it is a popular choice for use in a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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TSM2NB60CH C5G Datasheet/PDF