TSM2N100CH C5G

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The TSM2N100CH C5G is a depletion mode N-Channel field-effect transistor (FET). It is designed to provide low input capacitance, low on-resistance, and fast switching performance. The FET also has low gate-source capacitance and is suitable for high-frequency applications up to 50 MHz. It is an enhancement type of N-Channel MOSFET that is suitable for use in digital and analog electronic equipment. The FET is typically used as a driver in switching circuits and as a limit switch in power supply circuits.

The TSM2N100CH C5G is a single-input FET which operates in both enhancement and depletion modes. It consists of a source, gate and drain. The source and drain terminals act as inputs and the gate terminal acts as the output. When the gate voltage is low, it turns on the FET, allowing current to flow between the source and drain. As the voltage on the gate increases, the current flowing through the FET decreases until it stops. This is how the FET operates in its enhancement mode. In depletion mode, the current flowing between the source and drain increases as the gate voltage decreases. The TSM2N100CH C5G has a drain-source breakdown voltage of 100 V and a maximum drain-source current of 7.2 A.

The working principle of the TSM2N100CH C5G is based on semiconductor and electronic principles. When a voltage is applied to the base contact, it creates an electric field that has a powerful effect on a semiconductor material. This electric field causes electrons to be drawn from the source to the drain, and holes (positive charge carriers) to be drawn from the drain to the source. The movement of the electrons and the holes creates an electrical current between the source and drain. This is the basic principle behind FET operation.

The TSM2N100CH C5G is used in a wide range of applications, including switching circuits, RF amplification, power supply control, rectification, and high-frequency signal processing. Due to its low on-resistance and high switching speed, the FET is well suited for high-frequency applications up to 50 MHz. It is also often used in analog circuits to provide precision current control. Moreover, due to its low input capacitance, the FET is ideal for high-speed applications where fast switching is required.

In conclusion, the TSM2N100CH C5G is a depletion mode N-Channel field-effect transistor that is suitable for high-frequency applications, switching circuits and analog circuits. Due to its low on-resistance, low input capacitance and fast switching speed, the FET is an excellent choice for applications requiring precision current control and high-speed switching.

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