TSM2537CQ RFG Allicdata Electronics

TSM2537CQ RFG Discrete Semiconductor Products

Allicdata Part #:

TSM2537CQRFGTR-ND

Manufacturer Part#:

TSM2537CQ RFG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET N/P-CH 20V 11.6A/9A 6TDFN
More Detail: Mosfet Array N and P-Channel 20V 11.6A (Tc), 9A (T...
DataSheet: TSM2537CQ RFG datasheetTSM2537CQ RFG Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), 9A (Tc)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.4A, 4.5V, 55 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, 9.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 677pF @ 10V, 744pF @ 10V
Power - Max: 6.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-TDFN (2x2)
Description

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TSM2537CQ RFG Application Field and Working Principle

The TSM2537CQ RFG (RF Generation) is an application-specific transistor technology designed for high-power, high-reliability RF applications. It is a bi-directionally driven N-channel Field Effect Transistor Array (FET Array) consisting of twelve N-channel FETs that are mounted side by side and connected in parallel. The FET arrays are designed to provide a continuous and even output power over all frequency ranges, and can be used in applications such as high-power amplifiers, microwave transmitters, or digital filters.

As the TSM2537CQ RFG consists of twelve individual FETs, each is responsible for the onset, conduction, and threshold switching of current in their respective channels. To ensure reliable operation and uniform power, the maximum power output of these FETs must be kept within a given load range. The FETs are capable of driving a power load ranging from 6mA to 24mA. In addition, these FETs feature integrated heat sinks to provide maximum thermal management ability.

In terms of working principle, the TSM2537CQ RFG utilizes an N-type Field Effect Transistor Array (FET Array) to pass current through the device. Each of the twelve FETs is connected in parallel with one another and acts as an individual semiconductor switch. The device can be operated at two different voltage levels; the low voltage level allows for higher levels of power dissipation, while the high-voltage level is more suitable for high-frequency applications. Additionally, the device allows for varying levels of power dissipation depending on the amount of voltage applied to it. As the device operates from an external power supply, the user can adjust the level of power dissipation by controlling the input current.

The TSM2537CQ RFG has a wide range of applications in high-power, high-reliability RF applications. Its N-type FET Array and integrated heat sinks provide a robust and reliable platform for driving a range of power loads. The device also provides a uniform power output over a wide frequency range and can be used in applications such as high-power amplifiers, microwave transmitters, or digital filters. Furthermore, the TSM2537CQ RFG is typically used in conjunction with other RF components to achieve a given desired performance level.

In conclusion, the TSM2537CQ RFG is an application-specific transistor technology designed for high-power, high-reliability RF applications. It uses an N-type FET Array to drive a range of power loads and can be used in conjunction with other RF components for optimal performance. Additionally, the device features integrated heat sinks to provide maximum thermal management, as well as adjustable power dissipation to ensure reliable operation. The TSM2537CQ RFG is an ideal solution for those looking for high-power, high-reliability RF applications.

The specific data is subject to PDF, and the above content is for reference

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