TSM210N06CZ C0G

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The TSM210N06CZ C0G is a low impedance N-channel power field-effect transistor (FET) designed for high power applications. It is suitable for a variety of applications, including high-side and low-side switching, voltage regulation, and current sensing. The device features low on-resistance and high gate and drain-source breakdown voltages. It also has a temperature range of -55 to +125 °C.

The TSM210N06CZ C0G is based on a state-of-the-art vertical planar construction, which is renowned for its compact size and low losses. The N-channel MOSFET also has a small spacing between the gate and the source/drain connections. This reduces the conduction losses and allows the device to achieve higher switching frequencies, resulting in improved efficiency.

The working principle of the TSM210N06CZ C0G is based on a simple yet effective principle. It consists of two terminals, the source and the drain, and a gate in the middle, which controls the flow of current between the two terminals. When a voltage is applied to the gate, it creates an electric field that attracts the carriers (electrons or holes), which form a channel between the source and the drain. This channel allows current to flow between the two terminals.

The TSM210N06CZ C0G can be used in a range of high power applications, such as motor drive circuits, inverters, and high-power DC-DC converters. It also finds use in low voltage regulation for industrial and automotive applications. The device is a good choice for applications requiring low on-resistance and high reliability.

The TSM210N06CZ C0G is a reliable and efficient N-channel MOSFET designed for various power applications. It has a small-spacing gate and source/drain connections that reduce conduction losses, resulting in improved efficiency. The device also has a wide temperature range, making it suitable for a variety of applications.

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