Allicdata Part #: | TSM240N03CX6RFGTR-ND |
Manufacturer Part#: |
TSM240N03CX6 RFG |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CHANNEL 30V 6.5A SOT26 |
More Detail: | N-Channel 30V 6.5A (Tc) 1.56W (Tc) Surface Mount S... |
DataSheet: | TSM240N03CX6 RFG Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.07433 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | SOT-26 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.56W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 345pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 4.1nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TSM240N03CX6 RFG is a field effect transistor (FET) device suitable for applications requiring high voltage ratings, high speed switching and low on-resistance. It belongs to the single gate FET category, in particular a metal-oxide-semiconductor FET (MOSFET). As with other FETs, the TSM240N03CX6 RFG is a current controlled device. By controlling the current flowing through the device, the voltage across it can be controlled or switched on and off.
The benefits of the TSM240N03CX6 RFG are significant due to its high voltage ratings and its low on-resistance, or RDS(on). This is a measure of the resistance across the device when the transistor is fully on. The higher the RDS(on), the greater the current flow which in turn means higher power dissipation and increased temperature rise.
In general, the TSM240N03CX6 RFG is optimized for high speed switching applications. The fast switching characteristics of the device make it well suited for high frequency switching applications such as switch mode power supplies, which require high speed switching and low RDS(on). As the device can handle high voltages, it is also well suited for motor control and power management systems.
The TSM240N03CX6 RFG is a unipolar transistor. This means that it requires just one type of charge carrier, either electrons or holes, to flow through the device. The way these charges flow is determined by the device\'s gate structure. The gate of a MOSFET is essentially an insulated electrode which is usually connected to a voltage source. When a voltage is applied to the gate, the electric field generated by the gate attracts a large number of charge carriers, usually electrons, to the device channel. This in turn causes the device to turn on.
The device channel is essentially an insulator between the source and drain. When the device is switched on, the voltage applied to the gate is strong enough to form an inversion layer across the channel, allowing electrons to flow from the source to the drain. The on-state resistance of the device is determined by the ratio of the cross-sectional area of the inversion layer to the cross-sectional area of the channel region.
In operation, the TSM240N03CX6 RFG acts as an on/off switch, allowing current to flow through it when switched on and blocking the current when switched off. As the device is unipolar, only one type of current flow is required to operate it. This simplifies the circuit design and reduces the energy consumption of the design. The fast switching and low on-state resistance of the device make it ideal for high speed applications.
The TSM240N03CX6 RFG can be used in applications such as radio frequency (RF) signal amplification, power supply and motor control, as well as power conditioning and signal processing. It is also suitable for battery management and over-voltage protection. In general, the device is well suited for applications that require high voltage ratings, high speed switching and low on-resistance.
The specific data is subject to PDF, and the above content is for reference
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