Allicdata Part #: | TSM2NB65CPROGTR-ND |
Manufacturer Part#: |
TSM2NB65CP ROG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CHANNEL 650V 2A TO252 |
More Detail: | N-Channel 650V 2A (Tc) 65W (Tc) Surface Mount TO-2... |
DataSheet: | TSM2NB65CP ROG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 65W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 390pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The TSM2NB65CP ROG is a single MOSFET that falls into a family of relatively new power-switching devices called Trench-SILMOS (Silicon On Insulator Metal Oxide Semiconductor) fabrication technology. This power-switching device is ideal for use in a variety of applications due to its robust design and lower on-resistances. It also can provide superior protection from power supply overcurrents and voltage spikes.
The TSM2NB65CP ROG is used in a wide range of applications. Its most common applications are in low-voltage AC/DC power supplies, high-frequency DC-DC converters, and in industrial machines, such as pumps, compressors, and welding machines. The MOSFET can also be used in motor control applications and in telecommunications circuit boards.
The working principle of the TSM2NB65CP ROG is three-phased. It includes turning on, providing a current path between the source and the drain by using an electrically isolated gate, and turning off the device by reversing the electrical potentials. The on-state of the device is the point at which the voltage applied to the gate leads to a current flow that is assumed to be conductive, and the off-state of the device is the point where the voltage applied to the gate does not result in a current flow. The device also uses a body diode to provide a reverse current path when the MOSFET is in the off-state.
The TSM2NB65CP ROG is designed to be robust, which is important for providing reliable switch behavior across different applications and environments. This is managed by utilizing the Trench-SILMOS technology to produce the device structure. This structure provides the unique benefits of increased breakdown strength and superior on-state performance. This combination allows the device to handle higher currents, while also providing superior protection from voltage spikes.
The device is also able to provide lower on-resistances, which is ideal for applications that require precise current control or increased efficiency. Lower on-resistances allows the device to provide more current while still dissipating less heat. This also reduces the amount of power dissipated in the device.
The TSM2NB65CP ROG is an ideal device for applications that require reliable power switching. Its robust design allows it to handle higher currents and higher voltages, while providing superior protection from voltage spikes. Additionally, the lower on-resistances allows the device to provide more current with lower power dissipation. This makes it an ideal choice for high-efficiency applications.
The specific data is subject to PDF, and the above content is for reference
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