| Allicdata Part #: | TSM210N02CXRFGTR-ND |
| Manufacturer Part#: |
TSM210N02CX RFG |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | MOSFET N-CHANNEL 20V 6.7A SOT23 |
| More Detail: | N-Channel 20V 6.7A (Tc) 1.56W (Tc) Surface Mount S... |
| DataSheet: | TSM210N02CX RFG Datasheet/PDF |
| Quantity: | 12000 |
| Vgs(th) (Max) @ Id: | 800mV @ 250µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 1.56W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 10V |
| Vgs (Max): | ±10V |
| Gate Charge (Qg) (Max) @ Vgs: | 4nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 25 mOhm @ 4A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 6.7A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The TSM210N02CX RFG is a type of single-gate field effect transistor (FET), a type of transistor commonly used in electronic circuits. It is based on a type of aluminum gallium arsenide (AlGaAs) semiconductor material. The main characteristics of this type of RFG are low power consumption and high efficiency, making it suitable for many aplications.
A FET is a type of transistor in which the gate electrode signifies the level of current energy required from the FET. The gate of the TSM210N02CX RFG controls the behavior of the source and drain, allowing for the passage of current or blocking it. This is determined by the amount of voltage or current that is applied to the gate terminal. In this way, the FET functions as an electronic switch.
The working principle of the TSM210N02CX RFG is fairly simple. When no voltage is applied to the gate, the FET is off. In this state, no current can flow. By applying a small positive voltage to the gate terminal, the FET can be turned on. This causes the FET to act like a resistor, allowing current to flow between the source and drain. The gate voltage can be adjusted to control the resistance of the FET, and therefore the current flow.
One of the primary applications of TSM210N02CX RFG is in radio frequency (RF) devices such as amplifiers, filters and oscillators. The low power consumption of this type of FET makes it particularly suitable for use in RF devices. It is also used in digital logic devices, such as circuits for microprocessors, ASICs and memories. It is also found in a variety of other applications, such as switch mode power supplies.
In conclusion, the TSM210N02CX RFG is a type of single-gate field effect transistor that is suitable for many applications. It has a low power consumption and high efficiency. By applying a voltage to the gate terminal, the resistance of the FET can be controlled, allowing current to flow between the source and drain. The primary applications of the TSM210N02CX RFG are in radio frequency (RF) devices and digital logic circuits.
The specific data is subject to PDF, and the above content is for reference
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TSM210N02CX RFG Datasheet/PDF