TSM60N06CP ROG Allicdata Electronics
Allicdata Part #:

TSM60N06CPROGTR-ND

Manufacturer Part#:

TSM60N06CP ROG

Price: $ 0.36
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET N-CHANNEL 60V 66A TO252
More Detail: N-Channel 60V 66A (Tc) 44.6W (Tc) Surface Mount TO...
DataSheet: TSM60N06CP ROG datasheetTSM60N06CP ROG Datasheet/PDF
Quantity: 1000
2500 +: $ 0.32458
Stock 1000Can Ship Immediately
$ 0.36
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 44.6W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4382pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The TSM60N06CP ROG is a part of transistors, FETs, and MOSFETs, and belongs to the single category. It is a P-type enhancement MOSFET designed for use in switching applications. It is designed to be used in applications such as high power DC-DC converters, PFC converters, AC adapters, laptops and computer applications. The device features low RDS(ON), very low thermal resistance. The device is rated up to a current of 60A and is available in a wide variety of packages.

The working of the MOSFETs can be understood by observing the underlying principles behind the operation of these transistors. The MOSFET or field-effect transistor consists of an insulated gate that controls the flow of a voltage between the source and drain regions of the transistor. The gate of a MOSFET is held at a certain potential, which controls the flow of electrons between the source and the drain. If a positive potential is applied to the gate, then electrons tend to move from the source to the drain, and the result is an “ON” state. If a negative potential is applied to the gate, then electrons move in the opposite direction, and the result is an “OFF” state.

The TSM60N06CP ROG has a maximum drain-source voltage rating of 60V, a drain-source on-resistance rating of<200mΩ, and a drain-source on current rating of 60A. It also has various characteristics such as high-speed switching and low capacitance between the drain and source. Furthermore, the device has a high-current carrying capacity and is capable of working at very high temperatures.

The TSM60N06CP ROG can be used in various applications such as the switching of DC-DC converters, PFC converters, AC adapters, and thermal power controllers. This device is also suitable for use in electric vehicles, which require reliable and efficient control of high-power components. It can also be used in off-road vehicles and industrial equipment, which require flexible and high-efficiency control of power.

The TSM60N06CP ROG can provide an excellent balance of performance, cost and reliability. It has both low-side and high-side circuits and is capable of handling high current and high power. It is also highly reliable and highly efficient when switching high current and voltage signals. It is also capable of working at high temperatures, making it suitable for high-power applications.

In summary, the TSM60N06CP ROG is an excellent choice for a number of applications requiring reliable and efficient switching. Its low RDS(ON), low thermal resistance, and wide variety of packages make it a highly suitable MOSFET for various types of switching applications. It is also capable of supporting high current and voltage signals, making it suitable for high-power applications such as AC adapters, DC-DC converters, and PFC converters. It is reliable and highly efficient at switching levels. For these reasons, the TSM60N06CP ROG is a great choice for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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