TSM6NB60CI C0G

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package:	ITO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	40W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	872pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	18.3nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	1.6 Ohm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The TSM6NB60CI C0G is a high-voltage and high-density MOSFET device. It is a single-channel, low-on-resistance, low-threshold device, suitable for applications with high peak currents in high voltage circuits. Generally speaking, this device is used in switching applications with high current, low voltage, and short switching times. This MOSFET has very good performance, with an on-resistance of 276 mΩ and a low threshold voltage. It features a high drain-source breakdown voltage (BVDSS) of 600 V and the safe operating area (SOA) is 0.19 A/μs. The maximum junction temperature (TJ) is 175°C while the storage temperature range is -55°C to 175°C. The device is an insulated gate field-effect transistor (IGFET) or simply MOSFET, one of the most important semiconductor devices in modern electronics. It consists of a source material which acts as an insulator separating the gate, drain and source regions of the transistor. The MOSFET has the highest switching speed among all field-effect transistors and can be used for switching applications with high current. The MOSFET transistor works as a voltage-controlled current source, regulating current in an electronic circuit. It works on a simple principle; it acts as a switch with three connections; a gate, a source and a drain. When a voltage is applied between the gate and the source, an electric field is created between the two layers of the MOSFET structure, called the ‘inversion layer’. This field turns on the MOSFET, allowing current to flow through the MOSFET from the source to the drain.The TSM6NB60CI C0G is ideal for applications such as motor driver circuits, relay drivers and DC/DC converters. It also finds applications in medical, industrial, energy and automotive electronics. Its high power and low switching times make it suitable for automotive applications such as power windows and power seats. Its low threshold voltage, high peak currents and high breakdown voltage make it perfect for industrial and medical applications such as UPS systems and metering systems. The TSM6NB60CI C0G provides excellent performance with a very low on-state resistance, low threshold voltage and high breakdown voltage. It is reliable, efficient and has a long life, making it an ideal choice for high voltage and high peak current applications. With its many applications, it is a must-have device for electronics engineers.

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