Allicdata Part #: | TSM60N380CPROGTR-ND |
Manufacturer Part#: |
TSM60N380CP ROG |
Price: | $ 0.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CHANNEL 600V 11A TO252 |
More Detail: | N-Channel 600V 11A (Tc) 125W (Tc) Surface Mount TO... |
DataSheet: | TSM60N380CP ROG Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.66509 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1040pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 20.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The TSM60N380CP ROG is a type of single MOSFET transistor that is well-suited for a wide range of applications. These transistors are among the most popular and widely used MOSFETs in the market. As such, they are capable of meeting the demands of a variety of applications in different industries.
The TSM60N380CP ROG is a type of PMOS (positive-mode metal-oxide-semiconductor) transistor. It utilizes a slightly thicker oxide layer sandwiched between two metal electrodes. This improves the performance of the MOSFET, allowing it to handle higher voltages and bigger currents than other similar types of transistors.
The body of the P-channel MOSFET consists of three terminals: the source, drain, and gate. The source is the negative terminal that supplies the current to the circuit. The drain is the positive terminal where the current collects and flows away from the circuit. The gate is the terminal between the source and drain that is used to control the amount of current flowing through the circuit. By adjusting the voltage applied to the gate terminal, the amount of current passing through the circuit can be varied.
The TSM60N380CP ROG is well-suited for virtually all types of applications. It can be used in amplified audio circuits, digital circuits, switching circuits, power supply circuits, instrumentation circuits, and many other applications. In addition, these transistors can also be used to drive electric motors, control power supplies, regulate audio amplifiers, or other similar tasks.
The TSM60N380CP ROG has a wide operating range and is capable of handling both high and low voltages. It can easily handle a wide range of loads in a wide range of temperature and humidity environments. For this reason, these MOSFETs can be used in a variety of industrial and consumer applications. The TSM60N380CP ROG can also be used as a replacement for other types of transistors such as bipolar transistors or BJTs.
The working principle of the TSM60N380CP ROG is very simple. When the gate voltage is increased, the current passing through the source and drain terminals is also increased. This is due to the increased capacitance of the semiconductor and the increased attraction between the charge carriers in the device. As the current passes through the circuit, it is able to perform its intended function. This is the basic working principle of most transistors and the same holds true for the TSM60N380CP ROG.
The TSM60N380CP ROG is a reliable and efficient MOSFET for a wide range of applications. With its wide operating range and high current handling capabilities, it is the perfect choice for numerous applications in different industries. Thanks to its simple operation and reliable performance, users can expect to get maximum benefit from this type of transistor in their various applications. Thanks to its excellent performance, users can be sure that the TSM60N380CP ROG will be a valuable addition to their collection of transistors.
The specific data is subject to PDF, and the above content is for reference
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