TSM60NB1R4CH C5G

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The TSM60NB1R4CH C5G is a single N-channel, depletion-mode MOSFET (metal-oxide semiconductor field-effect transistor) that is designed for high-frequency switching applications. It is a VHF-UHF power MOSFET transistor with an improved internal structure optimized for usage at higher frequencies. The device has a breakdown voltage of -60 volts and offers a maximum drain current of 4 Amperes.

The TSM60NB1R4CH C5G is mainly used in high-frequency switching, such as in RF amplifiers, RF switches, UHF, VHF and satellite TV applications, such as: set-top boxes, digital video recorders, direct broadcast satellite receivers, cable TV receivers and PCTV systems.

The TSM60NB1R4CH C5G offers a number of benefits in these types of applications. It has a low insertion loss, making it ideal for high-speed switching, and also offers superior thermal stability, improved output power capabilities, and improved RF linearity. In addition, the device has an excellent power efficiency ratio, which makes it extremely reliable and energy-efficient in operation.

The working principle of the TSM60NB1R4CH C5G is based on the basic MOSFET operation and employs the use of four terminals—the gate, drain, source, and body (substrate). In the active mode, a voltage is applied to the gate terminal which in turn modulate the charge carrier concentration at the channel region, which allows the flow of current from drain to source. Conversely, when the gate voltage is reversed, the charge carrier concentration increases which in turn blocks the current flow, thus shutting off the MOSFET.

The TSM60NB1R4CH C5G also utilizes a design which makes it suitable for switching high-frequency and low-power switching applications. The device incorporates a high-speed, high-pulse energy (HPE) circuit design, which provides improved switching speed and increased switching performance. The device also features a low output capacitance, which helps reduce the power lost to heat and increase the device’s efficiency. This allows for faster turn-on/turn-off times and higher switching frequencies.

In addition, the TSM60NB1R4CH C5G is designed to offer low input capacitance, low leakage current, and improved drain-source breakdown voltage, which give the device increased performance, improved reliability, and reduced power consumption. The device also incorporates a “floating body” design which helps to reduce the drain-source capacitance, improve the ESD performance, and reduce switching times.

The TSM60NB1R4CH C5G is an excellent choice for a wide variety of high-frequency switching applications due to its combination of high performance and low power consumption. With its improved internal structure, it is optimized for performance at higher frequencies and offers excellent switching performance. By utilizing a low input capacitance, low leakage current, and improved drain-source breakdown voltage, the device provides improved reliability, reduced power consumption, and faster switching times.

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