TSM60NB041PW C1G

Gate Charge (Qg) (Max) @ Vgs:	139nC @ 10V
Package / Case:	TO-247-3
Supplier Device Package:	TO-247
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	446W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6120pF @ 100V
Vgs (Max):	±30V
Series:	--
Vgs(th) (Max) @ Id:	4V @ 250µA
Rds On (Max) @ Id, Vgs:	41 mOhm @ 21.7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	78A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active

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TSM60NB041PW C1G Application Field and Working PrincipleThe TSM60NB041PW C1G is a specialized Field Effect Transistor (FET) designed for switching applications. It is a single N-type or P-type MOSFET that is commonly used to control the current in electronic circuits. It is capable of handling up to 60A of power and is designed for use in a variety of electronic applications including automotive and industrial applications.This type of transistor works by using the principle of an electric field to control the flow of current through the device. FETs are voltage-controlled devices that typically require less current than their bipolar counterparts do to switch the same amount of current. In an N-type transistor, the concentration of electrons near the gate determines the path of the current. When a positive voltage is applied to the gate, the electrons are attracted to it, reducing the number of electrons near the source and creating a voltage drop across the source-drain channel. This in turn allows more current to flow through the channel and allows the transistor to switch at relatively high speeds.The TSM60NB041PW C1G offers a wide range of features and benefits that make it an excellent choice for many types of applications. It features an ultra-fast switching speed with a maximum turn on and turn off time of just 55ns. It also offers high ESD capability, making it an ideal choice for use in high-voltage applications. It can also handle a wide range of temperatures, from -55°C to 150°C, making it suitable for use in outdoor applications. Additionally, its high power handling capability makes it suitable for use in high-power systems like automotive and industrial applications.The TSM60NB041PW C1G is also designed with a low on-resistance, making it well suited for use in low-voltage and low-power applications. It has a gate voltage of 10V and a breakdown voltage of ≥15V, making it suitable for applications where the FET needs to turn on and off quickly without pulling too much current. Additionally, the FET has an ultra-low gate charge, making it ideal for applications where current draw needs to be minimized.Overall, the TSM60NB041PW C1G is an excellent choice for a wide range of applications due to its high power handling capability, ultra-fast switching speeds and wide range of features and benefits. It is an excellent choice for use in automotive, industrial and outdoor applications. Its low on-resistance allows it to be used in low-voltage and low-power applications, and its gate charge makes it ideal for uses where current draw needs to be minimized. It is easy to install and use and is an ideal choice for those who need a reliable and powerful Field Effect Transistor for their applications.

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