Allicdata Part #: | TSM6866SDCARVGTR-ND |
Manufacturer Part#: |
TSM6866SDCA RVG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET 2 N-CH 20V 6A 8TSSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 6A (Ta) 1.6W S... |
DataSheet: | TSM6866SDCA RVG Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 6A, 4.5V |
Vgs(th) (Max) @ Id: | 600mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 565pF @ 8V |
Power - Max: | 1.6W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
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TMS6866SDCA RVG is a silicon wafer processing ion implantation system developed by Thorlabs, which is used in the active miniaturization of submicron devices. This device can provide a precise and stable dose of implantation and is applicable to a wide range of ion implantation applications such as gallium arsenide field effect transistors (GaAs FETs), MOSFETs, and DiD/Laser arrays.
The TMS6866SDCA RVG system includes an electronic based ion source, a rapid scanning valve, and a precise dose control system. The electronic ion source provides ions for implantation at a controlled rate. The rapid scanning valve, driven by a stepper motor, quickly scans the ions along the substrate surface. The precise dose control system ensures that the exact dose of ion implantation is delivered to the substrate. The electron source and the rapid scanning valve are powered by ESD protected three-phase AC power supply, while the precise dose control system is driven by a single-phase AC power supply. The system is highly reliable and is available in a variety of diameters.
The TMS6866SDCA RVG system is mainly used in the fabrication of GaAs FETs and MOSFETs. The system can easily achieve precise and stable implantation, which is essential for producing these devices. In addition, the system can also be used to create DiD/Laser arrays. The device can quickly scan and deliver ion implantation at highly precise rates, which is necessary for creating such minuscule arrays. With its precise dose control and fast scanning capabilities, the TMS6866SDCA RVG system offers a high-precision and cost-effective solution for producing GaAs FETs, MOSFETs, and DiD/Laser arrays.
In conclusion, the TMS6866SDCA RVG is an advanced silicon wafer processing system which is incredibly efficient and precise. This device is mainly used for active miniaturization of submicron devices such as GaAs FETs, MOSFETs, and DiD/Laser arrays. It operates through an electronic based ion source, a rapid scanning valve, and a precise dose control system for precise and sustainable implantation. With its reliable performance and high-precision capabilities, the TMS6866SDCA RVG system is the perfect choice for fabrication of GaAs FETs, MOSFETs, and DiD/Laser arrays.
The specific data is subject to PDF, and the above content is for reference
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