TSM600N25ECH C5G

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The TSM600N25ECH C5G is a high-voltage, high-current metal-oxide semiconductor field-effect transistor (MOSFET) with a maximum drain source voltage of 600 volts, a maximum drain current of 25 amps, and a maximum gate source voltage of 18 volts. The device operates with a low input capacitance, making it ideal for a variety of applications. It is designed for use in amplified speech circuits, driving motors, power supplies, and other high-power applications.

1. Description of TSM600N25ECH C5G MOSFET

The TSM600N25ECH C5G is an N-channel enhancement MOSFET that facilitates power switching and amplifying applications in a variety of systems.

The device is built with an APEX embedded core technology, allowing it to reduce on-resistance to a minimum, minimize gate charge, and provide high switching performance.

Electrically, the TSM600N25ECH C5G is a depletion-type MOSFET, meaning that its output is normally on and the input must be brought to the gate potential to turn it off. The device is capable of both inversion and non-inversion operation.

The device has a maximum drain-source voltage of 600 volts and a maximum drain current of 25 amps. It has a low input capacitance, making it an excellent choice for applications that require low input capacitance and high current and/or voltage conduction.

2. Application Fields and Working Principle of TSM600N25ECH C5G MOSFET

The TSM600N25ECH C5G MOSFET is suitable for use in a variety of applications, including motor driving and amplified speech circuits, power supplies and other high-power applications.

MOSFETs are three-terminal devices that are basically switches. They operate by turning on or off the flow of electric current, based on the voltage applied to their control gate. The voltage applied to the gate determines how much current can pass through the device.

When the voltage applied to the gate is zero volts, the MOSFET is in its off-state, or cutoff, and no current can flow from source to drain. The increased voltage applied to the gate then pushes the FET into its on, or saturation, state and allows current to flow from source to drain.

In terms of application fields, the TSM600N25ECH C5G MOSFET can be used in circuits requiring the driving of small motors, such as those used in consumer electronics like cameras and toys. The device can also be used in amplified speech circuits, such as in digital voice recording systems. It is also suitable for use in power supplies, as its low input capacitance allows for improved power efficiency.

The device also provides improved reliability during switching operations. Its silicon dioxide insulation ensures that the device will not be affected by temperature fluctuations and thus provide long-term stability and reliability.

3. Conclusion

The TSM600N25ECH C5G is a high-voltage, high-current MOSFET designed for power switching and amplifying applications. It operates with a low input capacitance and is suitable for use in motor driving and amplified speech circuits, power supplies, and other high-power applications. The device provides improved reliability during switching operations and its silicon dioxide insulation ensures long-term stability and reliability.

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