| Allicdata Part #: | TSM60NB1R4CPROGTR-ND |
| Manufacturer Part#: |
TSM60NB1R4CP ROG |
| Price: | $ 0.18 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | MOSFET N-CHANNEL 600V 3A TO252 |
| More Detail: | N-Channel 600V 3A (Tc) 28.4W (Tc) Surface Mount TO... |
| DataSheet: | TSM60NB1R4CP ROG Datasheet/PDF |
| Quantity: | 1000 |
| 1875 +: | $ 0.16381 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252, (D-Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 28.4W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 257.3pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 7.12nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 900mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The TSM60NB1R4CP ROG is a popular choice for a wide range of applications. It is an N-channel MOSFET that is used in power circuit design and applications that require high current drive. The TSM60NB1R4CP is well-suited for many power control and switching applications as well as linear amplification. It is a single device with two separated channels and can provide up to 75A of continuous current. It also has a voltage control range of 0-20V and an operating temperature range of -55 to +150°C.
The TSM60NB1R4CP ROG is particularly useful for its fast switching speeds. It features a wide up turn time range from 4.7ns to 25ns and a fast turn down time range from 1.9ns to 4.6ns. This makes it ideal for use in high-speed circuits that require fast on and off switching times. It is also rated for high power load capacitances, resistance and inductance values for its particular size.
Using the TSM60NB1R4CP ROG in a linear fashion requires an attenuator, such as a resistor divider, to limit the applied current. This will provide a certain amount of voltage control over the output of the device and make it much easier to use in many linear amplifier applications. The resistor divider also helps provide better dynamic response of the device and it helps reduce the overall power consumption.
The TSM60NB1R4CP ROG is also well-suited for a variety of power amplifier applications. It has an insulated gate with a low output impedance and is capable of driving large single ended loads and small differential loads. This makes it great for use in low-noise audio applications and high-efficiency power amplifiers. The device can deliver high power outputs in a very efficient manner and its low output impedance helps improve signal fidelity.
The TSM60NB1R4CP ROG is often used in power supply design. It can act as a very efficient switch and it can drive large peak currents with extreme low drain-source on resistance. This makes it great for applications such as loudspeaker drivers, LED backlighting and other large power devices. It also features excellent body diode characteristics and a drain-source breakdown voltage rating of 60 volts.
In summary, the TSM60NB1R4CP ROG is an excellent choice for a wide range of applications. It is a reliable and efficient single channel N-channel MOSFET that can provide up to 75A of continuous current. Its fast switching speeds and low output impedance make it ideal for power control and switching, linear amplification and power amplifier applications. It can also be used in power supply design as well as a very efficient switch that can drive large peak currents with extremely low drain-source on resistance.
The specific data is subject to PDF, and the above content is for reference
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TSM60NB1R4CP ROG Datasheet/PDF