TSM650P02CX RFG

Vgs(th) (Max) @ Id:	800mV @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	1.56W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	515pF @ 10V
Vgs (Max):	±10V
Gate Charge (Qg) (Max) @ Vgs:	5.1nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	65 mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	4.1A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The TSM650P02CX RFG is a high-performance single N-channel metal–oxide–semiconductor field–effect transistor (MOSFET). It is suitable for use in a wide variety of applications such as in the following types of circuits:

Switch-Mode Power Supplies (SMPS)

The TSM650P02CX RFG is often used in switch-mode power supplies (SMPS) because its high-speed switching characteristics are well-suited for that type of circuit. The device features low on-resistance, low gate to drain capacitance, and enhanced avalanche capability. Its low gate charge and low gate to drain capacitance allow for fast switching operation. Its high output current ensures that it can withstand high loads, making it suitable for a range of power supply applications.

Motor Drive & Control

The TSM650P02CX RFG is also used for motor drive and control. Its high output current ensures that it can withstand high current overloads, making it suitable for this application. The device features high efficiency and low power dissipation, thanks to its low on-resistance and low gate to drain capacitance. Its high-speed switching characteristics make it ideal for a variety of motor drive and control applications.

Power Amplifiers and RF Switching

The TSM650P02CX RFG is also suitable for use in Class-D and Class-T audio amplifiers and RF switching applications, thanks to its excellent high-frequency noise and EMI performance, as well as its high power-handling capabilities. The device features low on-resistance and low gate to drain capacitance, which allow for fast switching and low power dissipation. It also features a high output current for high-power applications.

Working Principle

The TSM650P02CX RFG is a voltage-controlled thyristor or field-effect transistor. It is made up of a source, a drain, and a gate. The source and drain are connected to a P-type substrate, while the gate is connected to an N-type substrate. When the gate receives a signal, it creates an electric field between the source and drain, which switches on the device. By changing the voltage applied to the gate, the current through the channel can be controlled, allowing for switching and amplification.

In conclusion, the TSM650P02CX RFG is a high-performance single N-channel metal–oxide–semiconductor field–effect transistor (MOSFET) designed for use in a wide range of applications such as switch-mode power supplies, motor drive and control, power amplifiers, and RF switching. It features excellent high-frequency noise, low gate charge and low gate to drain capacitance for fast switching speeds, high output current for high-level loads, and low on-resistance and power dissipation for greater efficiency. This makes the device ideal for use in a variety of applications.

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