Allicdata Part #: | TSM60N750CHC5G-ND |
Manufacturer Part#: |
TSM60N750CH C5G |
Price: | $ 1.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CHANNEL 600V 6A TO251 |
More Detail: | N-Channel 600V 6A (Tc) 62.5W (Tc) Through Hole TO-... |
DataSheet: | TSM60N750CH C5G Datasheet/PDF |
Quantity: | 1875 |
1 +: | $ 0.91350 |
10 +: | $ 0.80829 |
100 +: | $ 0.63901 |
500 +: | $ 0.49556 |
1000 +: | $ 0.39123 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251 (IPAK) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 62.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 554pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 10.8nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 750 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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The TSM60N750CH C5G is a single-channel field-effect transistor (FET). FETs are three-terminal electronic devices that are used in the circuits of analog amplifiers and digital logic circuitry, to control the current that flows through the circuit. In FETs, the electric current through the channel is controlled by the voltage applied between two of the terminals. Since FETs are non-linear devices, the current is not proportional to the voltage.
The TSM60N750CH C5G is well-suited for high-powered applications that require excellent thermal stability and dynamic performance. It features an extended voltage range of 600V, a maximum power rating of 750W, and a dynamic drain current of 6A. The device has good switching speed and low on-resistance, making it ideal for use in DC-to-DC power converter designs, automotive classes, and power management applications.
The TSM60N750CH C5G FET works on the principle of field-effect in which the conductance of a channel between the drain and source terminals is controlled by the electric field created by the gate terminal. The gate acts as an insulated barrier between the drain and source terminals. When a positive voltage is applied to the gate terminal, the electric field thus created attracts the charge carriers (electrons or holes) present in the channel, leading to an increase in the current flow between the source and drain terminals. The magnitude of current flow is proportional to the gate voltage.
The switching characteristics of the TSM60N750CH C5G FET are also excellent when compared to other semiconductor devices such as bipolar transistors. Its on-resistance is very low, and the device can switch very quickly between its on and off states, so that it can be used in high-speed switching circuits. Its temperature-dependent characteristics make it suitable for use as a temperature-sensing device as well.
The TSM60N750CH C5G FET is suitable for use in a wide range of power-conversion designs; from automotive classes to class-D audio amplifiers, switchers, PFC boost converters, SMPS, and power management solutions. Its exceptional switching performance makes it ideal for applications where high power, efficiency, and reliability are paramount.
In conclusion, the TSM60N750CH C5G is a single-channel field-effect transistor designed for high-powered applications that require excellent thermal stability and dynamic performance. Its wide voltage range, high-current capabilities, low on-resistance, and fast switching speed make it suitable for a number of power-conversion designs. It can be used in automotive classes, power management solutions, and class-D audio amplifiers, among others.
The specific data is subject to PDF, and the above content is for reference
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