UNR211600L Allicdata Electronics

UNR211600L Discrete Semiconductor Products

Allicdata Part #:

UNR211600LTR-ND

Manufacturer Part#:

UNR211600L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 200MW MINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR211600L datasheetUNR211600L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1
Description

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UNR211600L is a single pre-biased NPN bipolar junction transistor (BJT). It can operate in both the NPN and PNP capacities and can be used for a variety of applications. Depending on the voltage, current and temperature, it can produce different levels of amplification. The UNR211600L is a popular choice for applications that require a powerful switching amplifier or multiple channel logic applications.

The UNR211600L is an all-in-one pre-biased transistor arrangement, making it ideal for applications requiring high speed response and highperformance, as well as for applications that need a minimal amount of external components. It includes an integrated collector resistor, diodeand other components. This makes the UNR211600L an easy-to-use and reliable solution for your application.

The working principle of the UNR211600L is essentially one of field-effect technology. When forward-biased, the current flowing through the base-to-emitter junction creates an electric field around the base-emitter. This electric field causes electrons within the collector-base junction to flow through it, creating an amplification effect. This amplification effect enables the transistor to operate at high speeds, as well as at high current levels.

The UNR211600L can be applied in a wide variety of applications due to its high-speed switching and low power consumption. It is particularly useful in power electronics applications such as motor controls, power switching, and power supplies, as well as audio amplifiers, video amplifiers and many others. Additionally, the UNR211600L can be utilized in power switching applications. For example, it can be used in a circuit to regulate the amount of current passing through a device, or to switch between AC or DC power sources.

The UNR211600L is also very popular in consumer electronics as it has low power consumption, low noise, and reliability. It can be used in televisions and other consumer products, as well as a variety of industrial and automotive applications. Furthermore, the UNR211600L is ideal for a wide range of logic and digital circuit applications, such as communications and buses, or for the development of complex logic and timing systems.

The UNR211600L is a versatile, reliable, and powerful transistor, capable of being used in a wide array of applications. Its field-effect technology allows for high-speed operation and ensures low power consumption, making it an ideal choice for numerous projects. Furthermore, its integrated components make it an easy-to-use and reliable solution for your application.

The specific data is subject to PDF, and the above content is for reference

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