UNR212300L Allicdata Electronics

UNR212300L Discrete Semiconductor Products

Allicdata Part #:

UNR212300LTR-ND

Manufacturer Part#:

UNR212300L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS PNP 200MW MINI3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: UNR212300L datasheetUNR212300L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1
Description

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The UNR212300L is a single pre-biased, NPN, high voltage transistor manufactured by General Semiconductor and designed for applications where high voltage and medium speed switching is needed. It is a typical bipolar junction transistor (BJT) with a maximum collector-emitter voltage of 300V. The UNR212300L offers excellent switching performance over a wide variety of power conversion, display equipment, and other industrial control applications.

The UNR212300L is unique in that it is a pre-biased transistor, which means that it is designed to operate in two modes: active and saturate. In active mode, the transistor can be used to amplify or switch a current or voltage between its collector and emitter. In saturate mode, the transistor provides larger current gain, making it well suited for applications that require higher current gains. The voltage across the collector and emitter is approximately 300V, allowing the transistor to operate at higher voltages than other standard BJTs.

The operation of the UNR212300L is based on the basic principles of operation for all BJTs. A base-emitter voltage produces a base current and, when sufficient current is applied to the base, a collector current will flow. Since the transistor is pre-biased, the base current is much smaller than in other BJTs which require an external source of bias voltage. The pre-biased transistor can switch faster and can be used in high-frequency applications.

The UNR212300L is an ideal choice for switching in relay applications, providing fast and reliable operation. Its wide voltage range and high frequency performance make it suitable for use in industrial motor control and power conversion applications. It can also be used in high voltage applications such as in power supplies and automotive control systems. Its superior switching capabilities make the UNR212300L a great choice for any application that requires fast and reliable switching.

The UNR212300L is a popular choice for many different applications due to its low cost and reliable performance. Its pre-biased operation provides faster and more reliable switching, making it ideal for applications where speed and precision are required. Its wide voltage range and high frequency performance make it an ideal choice for applications that require high voltage switching. The UNR212300L is a great choice for any application requiring high speed switching, high voltage, and reliable performance.

The specific data is subject to PDF, and the above content is for reference

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